Effects of oxidized Cu and Co layers on the formation of Au ohmic contacts to p-GaN

Sung Chen Chung, Yu Chiao Lin, Wen Tai Lin, J. R. Gong, C. T. Lee

研究成果: Article同行評審

1 引文 斯高帕斯(Scopus)

摘要

Effects of oxidized Cu and Co layers on the formation of Au ohmic contacts to p-GaN were explored. Upon annealing at a temperature of 400-500°C in air, Au/Cu/p-GaN and Cu/Au/p-GaN samples transformed to the CuO/Au/p-GaN structure and showed ohmic behavior. The specific contact resistance as low as 5 × 10-3Ω cm2could be reached. The formation of oxidized Au/Cu and Cu/Au ohmic contacts to p-GaN can be mainly attributed to removal of carbon contamination at the GaN surface and favored outdiffusion of Ga atoms to the Au contact layer due to the formation of Au-Ga solid solution and Ga-O, both of which are promoted by the formation of CuO. For the air-annealed Au/Co/p-GaN and Co/Au/p-GaN samples the failure in the formation of Au ohmic contacts to p-GaN can be ascribed to formation of Co oxide at the interface of Au/p-GaN.

原文English
期刊Journal of the Electrochemical Society
152
發行號5
DOIs
出版狀態Published - 2005 一月 1

All Science Journal Classification (ASJC) codes

  • 電子、光磁材料
  • 可再生能源、永續發展與環境
  • 凝聚態物理學
  • 表面、塗料和薄膜
  • 材料化學
  • 電化學

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