Effects of oxygen contents in the active channel layer on electrical characteristics of IGZO-based thin film transistors

C. J. Chiu, S. P. Chang, C. Y. Lu, P. Y. Su, S. J. Chang

研究成果: Conference contribution

1 引文 斯高帕斯(Scopus)

摘要

The authors report the fabrication of high performance a-IGZO thin film transistors (TFTs) with polymer gate dielectric prepared by spin-coating on a glass substrate. It was found that transmittance of the deposited polymer film was larger than 90% at 600 nm. It was also found that the a-IGZO TFT prepared with 0.14% oxygen partial pressure with annealing could provide us a higher mobility (i.e.,17.5cm 2/Vs) while maintaining good substrate swing and good I on/I off.

原文English
主出版物標題Physics of Semiconductors - 30th International Conference on the Physics of Semiconductors, ICPS-30
頁面931-932
頁數2
DOIs
出版狀態Published - 2011 十二月 1
事件30th International Conference on the Physics of Semiconductors, ICPS-30 - Seoul, Korea, Republic of
持續時間: 2010 七月 252010 七月 30

出版系列

名字AIP Conference Proceedings
1399
ISSN(列印)0094-243X
ISSN(電子)1551-7616

Other

Other30th International Conference on the Physics of Semiconductors, ICPS-30
國家Korea, Republic of
城市Seoul
期間10-07-2510-07-30

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy(all)

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  • 引用此

    Chiu, C. J., Chang, S. P., Lu, C. Y., Su, P. Y., & Chang, S. J. (2011). Effects of oxygen contents in the active channel layer on electrical characteristics of IGZO-based thin film transistors. 於 Physics of Semiconductors - 30th International Conference on the Physics of Semiconductors, ICPS-30 (頁 931-932). (AIP Conference Proceedings; 卷 1399). https://doi.org/10.1063/1.3666682