@inproceedings{25f4534f401241dda31ab2374c2ec986,
title = "Effects of oxygen contents in the active channel layer on electrical characteristics of IGZO-based thin film transistors",
abstract = "The authors report the fabrication of high performance a-IGZO thin film transistors (TFTs) with polymer gate dielectric prepared by spin-coating on a glass substrate. It was found that transmittance of the deposited polymer film was larger than 90% at 600 nm. It was also found that the a-IGZO TFT prepared with 0.14% oxygen partial pressure with annealing could provide us a higher mobility (i.e.,17.5cm 2/Vs) while maintaining good substrate swing and good I on/I off.",
author = "Chiu, {C. J.} and Chang, {S. P.} and Lu, {C. Y.} and Su, {P. Y.} and Chang, {S. J.}",
note = "Copyright: Copyright 2012 Elsevier B.V., All rights reserved.; 30th International Conference on the Physics of Semiconductors, ICPS-30 ; Conference date: 25-07-2010 Through 30-07-2010",
year = "2011",
doi = "10.1063/1.3666682",
language = "English",
isbn = "9780735410022",
series = "AIP Conference Proceedings",
pages = "931--932",
booktitle = "Physics of Semiconductors - 30th International Conference on the Physics of Semiconductors, ICPS-30",
}