Effects of pad grooves on chemical mechanical planarization

Yao Chen Wang, Tian Shiang Yang

研究成果: Article同行評審

23 引文 斯高帕斯(Scopus)

摘要

Chemical mechanical planarization (CMP) has played an enabling role in producing near-perfect planarity of interconnection and metal layers in ultralarge scale integrated devices. For stable and high performance of CMP, it is important to ensure uniform slurry flow at the pad-wafer interface, hence necessitating the use of grooved pads that help discharge debris and prevent subsequent particle loading effects. Here, using two-dimensional lubrication theory and contact mechanics models, we examine the effects of pad groove designs (viz. their width, depth, and spacing) on slurry flow in CMP. It is found that the presence of pad grooves generally increases the slurry flow rate (which clearly facilitates debris discharge) and the magnitude of the subambient fluid pressure (i.e., suction) on the pad-wafer interface. The increased suction implies higher contact stress on the pad-wafer interface, and hence the local material removal rate is expected to increase as well. However, our numerical results suggest that, as a grooved pad has less contact area for effective interaction with the wafer, the overall material removal rate is expected to increase as well. However, our numerical results suggest that, as a grooved pad has less contact area for effective interaction with the wafer, the overall material removal rate is decreased by the presence of pad grooves. There is therefore a trade-off between slurry flow rate enhancement and material removal rate reduction in pad groove design.

原文English
頁(從 - 到)H486-H494
期刊Journal of the Electrochemical Society
154
發行號6
DOIs
出版狀態Published - 2007

All Science Journal Classification (ASJC) codes

  • 電子、光磁材料
  • 可再生能源、永續發展與環境
  • 表面、塗料和薄膜
  • 電化學
  • 材料化學

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