Experimental results are presented for noise voltage, responsivity, and specific detectivity (D*) for the long wavelength infrared (IR) HgCdTe photoconductive detectors. Hg0.8Cd0.2Te photoconductive detectors passivated with ZnS/photo-enhanced native oxide have an improved noise spectral density and D* than the detectors passivated with only ZnS. The low frequency 1/f noise charges were measured for a Hg0.8Cd0.2Te photo detector, as a function of bias at 77 K, and the effective surface trap density determined from the 1/f noise charges measured at 1 Hz. It was found that the surface effective trap densities of stacked passivated sample and the sample passivated only with ZnS are close to 4 × 1017 and 9 × 1017 cm-2. eV-1 under 0.4 V bias and 1 μs integration time, respectively. We found that the numerical values of noise are strongly dependent upon surface passivation properties. It can be seen clearly that an HgCdTe photo detector with a stacked ZnS/photo-enhanced native oxide passivation is better than the HgCdTe photo detector passivated with a single ZnS layer.
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