Effects of passivation and extraction trap density on the 1/f noise of HgCdTe photoconductive detector

C. T. Lin, Y. K. Su, H. T. Huang, S. J. Chang, G. S. Chen, T. P. Sun, J. J. Luo

研究成果: Paper同行評審

1 引文 斯高帕斯(Scopus)

摘要

Experimental results are presented for noise voltage and responsivity for a HgCdTe photoconductive detector. Hg0.8Cd0.2Te photoconductive detector passivated with Zns/photo-enhanced native oxide shown an improved noise spectral density relative to detector passivated with only ZnS. The low frequency 1/f noise charges have been measured in Hg0.8Cd0.2Te photo detector as a function of bias and the effective insulator trap density from the 1/f noise charges was determined at 77 K. It was illustrated that the insulator effective trap densities of stacked passivation and only ZnS passivation are close to 4×1017 and 9×1017 cm-2 eV1 at 0.4 V bias with 1 msec integration time, respectively. We find that the numerical values of 1/f noise are strongly dependent upon surface passivation properties. From responsivity measurement, it is clear that the sweepout effect is only important at high electrical field. Finally, it is evident that these photo detectors, which passivated with stacked dielectric layers may be useful for focal plane array.

原文English
頁面168-174
頁數7
出版狀態Published - 1997
事件Proceedings of the 1996 IEEE International Conference on Semiconductor Electronics, ICSE - Penang, Malaysia
持續時間: 1996 十一月 261996 十一月 28

Other

OtherProceedings of the 1996 IEEE International Conference on Semiconductor Electronics, ICSE
城市Penang, Malaysia
期間96-11-2696-11-28

All Science Journal Classification (ASJC) codes

  • 工程 (全部)

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