Effects of phosphorus implantation on the activation of magnesium doped in GaN

Kuan Ting Liu, Shoou Jinn Chang, Sean Wu

研究成果: Article同行評審

摘要

The effects of phosphorus implantation on the activation of magnesium doped in GaN at different dopant concentration ratios have been systematically investigated. Hall effect measurements show that P implantation improves the hole concentration, and that this improvement is dependent on P/Mg dopant concentration ratio and annealing conditions. This phenomenon is attributable to the reduction in selfcompensation that results from the formation of deep donors and the enhanced Mg atom activation, which is in reasonable agreement with the optical properties observed by photoluminescence measurements. In addition, a new photoluminescence peak resulting from P-related transitions is also observed, evidently owing to the recombination of electrons from the shallow native donors with holes previously captured by isoelectronic P traps.

原文English
頁(從 - 到)810031-810034
頁數4
期刊Japanese journal of applied physics
48
發行號8 Part 1
DOIs
出版狀態Published - 2009

All Science Journal Classification (ASJC) codes

  • 工程 (全部)
  • 物理與天文學 (全部)

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