Effects of polarization on electroreflectance spectroscopy of surface-intrinsic n+-type doped GaAs

Y. G. Sung, S. J. Chiou, D. P. Wang, Y. T. Lu, K. F. Huang, T. C. Huang

研究成果: Article同行評審

1 引文 斯高帕斯(Scopus)

摘要

The electroreflectance (ER) spectra of a surface-intrinsic n+-type doped (100) GaAs have been measured at various polarization angles of the probe beam. Several Franz-Keldysh oscillations were observed above the band-gap energy, thus enabling heavy- and light-hole transitions to be separated by the application of the fast Fourier transform to the ER spectra. From this, the ratios of the amplitudes of the light- to heavy-hole transitions versus angle of polarization were obtained. At a large incident angle (80°), the strength of the field of the probe beam in the normal direction of the sample (Fz) was varied from zero to a larger component. It was found that the ratios increased with increasing Fz which is consistent with the theory that the light-hole transition becomes more enhanced with z-polarized light.

原文English
頁(從 - 到)78-80
頁數3
期刊Journal of Applied Physics
91
發行號1
DOIs
出版狀態Published - 2002 1月 1

All Science Journal Classification (ASJC) codes

  • 一般物理與天文學

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