Effects of post-deposition CdCl2 annealing on electronic properties of CdTe solar cells

Sanjoy Paul, Sandeep Sohal, Craig Swartz, Deng Bing Li, Sandip S. Bista, Corey R. Grice, Yanfa Yan, Mark Holtz, Jian V. Li

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摘要

The effects of post-deposition CdCl2 annealing temperature on the electronic properties of CdTe solar cells were investigated. CdTe devices incorporate Mg doped ZnO as a buffer layer and selenization using a CdSe interlayer for reducing the buffer/absorber interface recombination and increasing solar energy absorption respectively. The post-deposition CdCl2 annealing treatments were done under separate, inert atmospheres of nitrogen and helium across the temperature range 380–430 °C. Electrical characterization of devices is carried out including temperature dependent current-voltage characteristics, admittance spectroscopy, and Shockley-Read-Hall recombination analysis. The best improvements in device efficiency are obtained upon annealing at temperature 410 °C. This anneal correlated with reduced back contact barrier in CdTe and reduced grain-boundary barrier height which is beneficial for enhanced charge transport.

原文English
頁(從 - 到)938-948
頁數11
期刊Solar Energy
211
DOIs
出版狀態Published - 2020 十一月 15

All Science Journal Classification (ASJC) codes

  • Renewable Energy, Sustainability and the Environment
  • Materials Science(all)

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