Effects of postgrowth annealing treatment on the photoluminescence of zinc oxide nanorods

D. Wang, H. W. Seo, C. C. Tin, M. J. Bozack, J. R. Williams, M. Park, N. Sathitsuksanoh, An Jen Cheng, Y. H. Tzeng

研究成果: Article同行評審

75 引文 斯高帕斯(Scopus)

摘要

Postgrowth annealing was carried out to investigate the photoluminescence of zinc oxide (ZnO) nanorods synthesized using a thermal chemical vapor deposition method. The observed change in photoluminescence after the annealing processes strongly suggests that positively charged impurity ions or interstitial Zn ions are the recombination centers for green luminescence observed in the present sample. A model based on the interplay between the band bending at the surface and the migration of positively charged impurity ions or Zn ions was proposed, which satisfactorily explains the observed photoluminescence.

原文English
文章編號113509
期刊Journal of Applied Physics
99
發行號11
DOIs
出版狀態Published - 2006 六月 1

All Science Journal Classification (ASJC) codes

  • 物理與天文學 (全部)

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