TY - GEN
T1 - Effects of precursor flow rates on characteristics of low-k SiOC(H) film deposited by plasma-enhanced chemical vapor deposition
AU - Cheng, Yi Lung
AU - Huang, Chiao Wei
AU - Sun, Chung Ren
AU - Lee, Wen Hsi
N1 - Publisher Copyright:
©The Electrochemical Society.
PY - 2016
Y1 - 2016
N2 - In this study, low-dielectric constant (low-k) SiOC(H) films deposited using conventional plasma-enhanced chemical vapor deposition (PECVD) by varying flow rates of the deposition precursors were investigated through various characterization techniques. The used deposition precursors were DEMS and ATRP, which acted as a network matrix and a sacrificial porogen, respectively. Experimental results indicate that the flow rates of both DEMS and ATRT precursors influenced the properties of the resulting porous low-k SiOC(H) films, but the former caused a larger impact. For porous low-k SiOC(H) films deposited with an increase of DEMS flow rate, an enhanced cross-linking was formed, leading to a higher hardness, smaller pore size, better electric performance, and stronger dielectric breakdown strength. However, a higher dielectric constant (k) was the cost. The k values of porous low-k SiOC(H) films with various ATRP flow rates (1700-2500 sccm) remained unchanged, although, the optimized electrical characteristics and reliability were obtained as ATRP flow rate was 2100 sccm.
AB - In this study, low-dielectric constant (low-k) SiOC(H) films deposited using conventional plasma-enhanced chemical vapor deposition (PECVD) by varying flow rates of the deposition precursors were investigated through various characterization techniques. The used deposition precursors were DEMS and ATRP, which acted as a network matrix and a sacrificial porogen, respectively. Experimental results indicate that the flow rates of both DEMS and ATRT precursors influenced the properties of the resulting porous low-k SiOC(H) films, but the former caused a larger impact. For porous low-k SiOC(H) films deposited with an increase of DEMS flow rate, an enhanced cross-linking was formed, leading to a higher hardness, smaller pore size, better electric performance, and stronger dielectric breakdown strength. However, a higher dielectric constant (k) was the cost. The k values of porous low-k SiOC(H) films with various ATRP flow rates (1700-2500 sccm) remained unchanged, although, the optimized electrical characteristics and reliability were obtained as ATRP flow rate was 2100 sccm.
UR - https://www.scopus.com/pages/publications/85010672516
UR - https://www.scopus.com/pages/publications/85010672516#tab=citedBy
U2 - 10.1149/07202.0253ecst
DO - 10.1149/07202.0253ecst
M3 - Conference contribution
AN - SCOPUS:85010672516
T3 - ECS Transactions
SP - 253
EP - 268
BT - Dielectrics for Nanosystems 7
A2 - Misra, D.
A2 - Bauza, D.
A2 - Chen, Z.
A2 - Sundaram, K. B.
A2 - Obeng, Y. S.
A2 - Chikyow, T.
A2 - Iwai, H.
PB - Electrochemical Society Inc.
T2 - Symposium on Dielectrics for Nanosystems 7: Materials Science, Processing, Reliability, and Manufacturing - 229th ECS Meeting
Y2 - 29 May 2016 through 2 June 2016
ER -