TY - JOUR
T1 - Effects of silicon tetrachloride concentration on nanocrystalline silicon films growth
AU - Wong, Te Chi
AU - Wu, Jih Jen
N1 - Funding Information:
The authors would like to thank Dr K.H. Chen for help on Raman measurement. The financial support of this work, by the National Science Council in Taiwan under Contract No. NSC 89-2214-E-006-052, is gratefully acknowledged.
PY - 2003/8/1
Y1 - 2003/8/1
N2 - The effects of the silicon tetrachloride (SiCl4) concentration on the growth of the nanocrystalline silicon film using SiCl4/hydrogen (H2) reactants are investigated here. An almost twice enhancement of the deposition rate of the silicon film, while still maintaining the film with a high crystal fraction at a level of 96%, is achieved by increasing the SiCl4 concentration from 17 to 26% at a substrate temperature of 270 °C. The similar trends of the crystal fraction and deposition rate with the SiCl4 concentration are also observed from those films deposited at 180 °C. The morphologies of the nanocrystalline silicon films with a thickness of 460 nm which deposited at 270 °C from various SiCl4 concentrations are similar whereas they are drastically different as the film thickness increases to 2.6 μm. The roles of the SiCl4 concentration, which relates to Cl radical and H radical concentrations in gas phase, in the growth behaviors of the nanocrystalline silicon films are discussed.
AB - The effects of the silicon tetrachloride (SiCl4) concentration on the growth of the nanocrystalline silicon film using SiCl4/hydrogen (H2) reactants are investigated here. An almost twice enhancement of the deposition rate of the silicon film, while still maintaining the film with a high crystal fraction at a level of 96%, is achieved by increasing the SiCl4 concentration from 17 to 26% at a substrate temperature of 270 °C. The similar trends of the crystal fraction and deposition rate with the SiCl4 concentration are also observed from those films deposited at 180 °C. The morphologies of the nanocrystalline silicon films with a thickness of 460 nm which deposited at 270 °C from various SiCl4 concentrations are similar whereas they are drastically different as the film thickness increases to 2.6 μm. The roles of the SiCl4 concentration, which relates to Cl radical and H radical concentrations in gas phase, in the growth behaviors of the nanocrystalline silicon films are discussed.
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U2 - 10.1016/S0040-6090(03)00620-5
DO - 10.1016/S0040-6090(03)00620-5
M3 - Article
AN - SCOPUS:0038448129
VL - 437
SP - 45
EP - 50
JO - Thin Solid Films
JF - Thin Solid Films
SN - 0040-6090
IS - 1-2
ER -