Effects of substrate residue on the frequency response of high-tone bulk acoustic resonator

Re Ching Lin, Ying Chung Chen, Po Tsung Hsieh, Kuo Sheng Kao, Chih Ming Wang

研究成果: Conference contribution

2 引文 斯高帕斯(Scopus)

摘要

The high-tone bulk acoustic resonator (HBAR), consisted of a Mo/ZnO/Pt/Ti/Si structure, is fabricated. The thickness of Si substrate under HBAR is controlled by a twostep process of wet- and dry-etching. The resonance frequency spacing (Δf) of HBAR is dependent on the etching duration. The frequency response of the HBAR is measured using an HP8720 network analyzer and a CASCADE probe station. The estimation of Si residue based on the high-tone resonant phenomenon coincides with practical measurements. A frequency response with no harmonic resonance, which is an extreme case of HBAR without Si residue, is revealed. Furthermore, a sensor of high-frequency bulk acoustic wave resonator is obtained.

原文English
主出版物標題2007 IEEE International Frequency Control Symposium Joint with the 21st European Frequency and Time Forum, FCS
頁面695-698
頁數4
DOIs
出版狀態Published - 2007
事件2007 IEEE International Frequency Control Symposium Joint with the 21st European Frequency and Time Forum, FCS - Geneva, Switzerland
持續時間: 2007 五月 292007 六月 1

出版系列

名字Proceedings of the IEEE International Frequency Control Symposium and Exposition

Conference

Conference2007 IEEE International Frequency Control Symposium Joint with the 21st European Frequency and Time Forum, FCS
國家/地區Switzerland
城市Geneva
期間07-05-2907-06-01

All Science Journal Classification (ASJC) codes

  • 工程 (全部)

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