TY - GEN
T1 - Effects of surface treatment and annealing on properties of InN layers grown using metal organic chemical vapor deposition
AU - Chang, Sheng Po
AU - Chen, Kuan Jen
AU - Kuo, Po Jui
AU - Chiou, Yu Zung
N1 - Copyright:
Copyright 2013 Elsevier B.V., All rights reserved.
PY - 2013
Y1 - 2013
N2 - We report the effects surface treatment and annealing had on the properties of InN layers grown using metal organic chemical vapor deposition (MOCVD). The number of defects due to N vacancies decreased significantly with increasing annealing temperature. However, when the annealing temperature reached 700°C, the crystalline grain became larger on the film surfaces. Annealing at an appropriate temperature improved the crystalline quality and the electrical properties of the InN films. However, when the annealing temperature was too high, InN oxidized and even dissociated.
AB - We report the effects surface treatment and annealing had on the properties of InN layers grown using metal organic chemical vapor deposition (MOCVD). The number of defects due to N vacancies decreased significantly with increasing annealing temperature. However, when the annealing temperature reached 700°C, the crystalline grain became larger on the film surfaces. Annealing at an appropriate temperature improved the crystalline quality and the electrical properties of the InN films. However, when the annealing temperature was too high, InN oxidized and even dissociated.
UR - http://www.scopus.com/inward/record.url?scp=84872519528&partnerID=8YFLogxK
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U2 - 10.4028/www.scientific.net/AMM.271-272.190
DO - 10.4028/www.scientific.net/AMM.271-272.190
M3 - Conference contribution
AN - SCOPUS:84872519528
SN - 9783037855782
T3 - Applied Mechanics and Materials
SP - 190
EP - 196
BT - Frontiers of Manufacturing and Design Science III
T2 - 3rd International Conference on Frontiers of Manufacturing and Design Science, ICFMD 2012
Y2 - 11 December 2012 through 13 December 2012
ER -