This paper considers the intrinsic layer of hydrogenated amorphous silicon (a-Si:H) solar cells. The deposition temperature and electrode distance (between cathode and anode) are important factors for a-Si:H solar cells. Thus, this study examines the effects of deposition temperatures and electrode distances in the intrinsic layer of a-Si:H solar cells with regard to enhanced the short-circuit current density (J sc) and thereby conversion efficiency. It is shown that the J sc of a-Si:H solar cells can be increased by proper choice of deposition temperature and electrode distance of the i-a-Si:H layers. Results show that the optimized parameters improves the J sc of a-Si:H solar cells to 16.52 mA/cm 2, yielding an excellent conversion efficiency of 10.86%.