Effects of the sapphire substrate thickness on the performances of GaN-based LEDs

K. T. Lam; S. C. Hung; C. F. Shen; C. H. Liu; Y. X. Sun; S. J. Chang

doi:10.1088/0268-1242/24/6/065002

Effects of the sapphire substrate thickness on the performances of GaN-based LEDs

K. T. Lam, S. C. Hung, C. F. Shen, C. H. Liu, Y. X. Sun, S. J. Chang

研究成果: Article › 同行評審

4 引文斯高帕斯（Scopus）

摘要

GaN-based light-emitting diodes (LEDs) prepared on sapphire substrates with different thicknesses were fabricated and characterized. By thinning the sapphire substrate to 50 μm, it was found that we can achieve a larger output power under high current injection without increasing the operating voltage. Life tests also indicate that the LEDs prepared on a thin sapphire substrate are more reliable.

原文	English
文章編號	065002
期刊	Semiconductor Science and Technology
卷	24
發行號	6
DOIs	https://doi.org/10.1088/0268-1242/24/6/065002
出版狀態	Published - 2009 6月 10

All Science Journal Classification (ASJC) codes

電子、光磁材料
凝聚態物理學
電氣與電子工程
材料化學

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@article{45b5e6f68b5e4d3e9ebf98d6296bab9e,

title = "Effects of the sapphire substrate thickness on the performances of GaN-based LEDs",

abstract = "GaN-based light-emitting diodes (LEDs) prepared on sapphire substrates with different thicknesses were fabricated and characterized. By thinning the sapphire substrate to 50 μm, it was found that we can achieve a larger output power under high current injection without increasing the operating voltage. Life tests also indicate that the LEDs prepared on a thin sapphire substrate are more reliable.",

author = "Lam, {K. T.} and Hung, {S. C.} and Shen, {C. F.} and Liu, {C. H.} and Sun, {Y. X.} and Chang, {S. J.}",

year = "2009",

month = jun,

day = "10",

doi = "10.1088/0268-1242/24/6/065002",

language = "English",

volume = "24",

journal = "Semiconductor Science and Technology",

issn = "0268-1242",

publisher = "IOP Publishing Ltd.",

number = "6",

}

TY - JOUR

T1 - Effects of the sapphire substrate thickness on the performances of GaN-based LEDs

AU - Lam, K. T.

AU - Hung, S. C.

AU - Shen, C. F.

AU - Liu, C. H.

AU - Sun, Y. X.

AU - Chang, S. J.

PY - 2009/6/10

Y1 - 2009/6/10

N2 - GaN-based light-emitting diodes (LEDs) prepared on sapphire substrates with different thicknesses were fabricated and characterized. By thinning the sapphire substrate to 50 μm, it was found that we can achieve a larger output power under high current injection without increasing the operating voltage. Life tests also indicate that the LEDs prepared on a thin sapphire substrate are more reliable.

AB - GaN-based light-emitting diodes (LEDs) prepared on sapphire substrates with different thicknesses were fabricated and characterized. By thinning the sapphire substrate to 50 μm, it was found that we can achieve a larger output power under high current injection without increasing the operating voltage. Life tests also indicate that the LEDs prepared on a thin sapphire substrate are more reliable.

UR - http://www.scopus.com/inward/record.url?scp=78349255307&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=78349255307&partnerID=8YFLogxK

U2 - 10.1088/0268-1242/24/6/065002

DO - 10.1088/0268-1242/24/6/065002

M3 - Article

AN - SCOPUS:78349255307

SN - 0268-1242

VL - 24

JO - Semiconductor Science and Technology

JF - Semiconductor Science and Technology

IS - 6

M1 - 065002

ER -

Effects of the sapphire substrate thickness on the performances of GaN-based LEDs

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