Effects of thermal annealing on electrical, optical and structural properties of Ga-Doped ZnO films

P. C. Chang, K. H. Lee, A. N. Tu, S. J. Chang, K. L. Lee

研究成果: Conference contribution

摘要

Ga doped ZnO (GZO) films were prepared by radio frequency (rf) magnetron sputtering on glass or silicon substrates. Electrical, optical, and structural properties of these films were analyzed in order to investigate their dependence on thermal annealing temperature. GZO films with a minimum resistivity of 5.2×10-3 Ω-cm annealed at 400°C and a transparency above 80% in visible region were observed. The temperature-dependent conductivity affected the carrier transport and was related to the localization of carriers. The results of transmission spectra were consistent with the results of atomic force microscopy (AFM) scan. X-ray diffraction analysis and electron spectroscopy for chemical analysis were also used to investigate the properties of GZO films.

原文English
主出版物標題THERMEC 2009
頁面2891-2896
頁數6
出版狀態Published - 2010 二月 10
事件6th International Conference on Processing and Manufacturing of Advanced Materials - THERMEC'2009 - Berlin, Germany
持續時間: 2009 八月 252009 八月 29

出版系列

名字Materials Science Forum
638-642
ISSN(列印)0255-5476

Other

Other6th International Conference on Processing and Manufacturing of Advanced Materials - THERMEC'2009
國家Germany
城市Berlin
期間09-08-2509-08-29

    指紋

All Science Journal Classification (ASJC) codes

  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanics of Materials
  • Mechanical Engineering

引用此

Chang, P. C., Lee, K. H., Tu, A. N., Chang, S. J., & Lee, K. L. (2010). Effects of thermal annealing on electrical, optical and structural properties of Ga-Doped ZnO films. 於 THERMEC 2009 (頁 2891-2896). (Materials Science Forum; 卷 638-642).