Effects of Ti addition on the morphology, interfacial reaction, and diffusion of Cu on SiO2

C. J. Liu, J. S. Jeng, J. S. Chen, Y. K. Lin

研究成果: Article同行評審

33 引文 斯高帕斯(Scopus)

摘要

The morhological and interfacial characteristics of Cu/SiO2/<Si>, Cu(0.02 wt% Ti)/SiO2/<Si>, and Cu(2.98 wt% Ti)/SiO2/<Si> systems upon vacuum annealing were studied. It was found that the Cu(2.98 wt% Ti) film exhibits strong <111> texture, small grain size, and smooth surface after heat treatment.

原文English
頁(從 - 到)2361-2366
頁數6
期刊Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures
20
發行號6
DOIs
出版狀態Published - 2002 十一月

All Science Journal Classification (ASJC) codes

  • 凝聚態物理學
  • 電氣與電子工程

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