摘要
Thin-film transistors with zirconium doping on the indium-zinc oxide as active layer by the solution-processed deposition method were fabricated and their TFT characteristics were examined. The solution-processed ZrInZnO films show high transmittance over 90% in the visible region and good electrical characteristic of Ion/Ioff ratio current over 10 5.
| 原文 | English |
|---|---|
| 主出版物標題 | Society for Information Display - 19th International Display Workshops 2012, IDW/AD 2012 |
| 頁面 | 293-296 |
| 頁數 | 4 |
| 出版狀態 | Published - 2012 十二月 1 |
| 事件 | 19th International Display Workshops in Conjunction with Asia Display 2012, IDW/AD 2012 - Kyoto, Japan 持續時間: 2012 十二月 4 → 2012 十二月 7 |
出版系列
| 名字 | Proceedings of the International Display Workshops |
|---|---|
| 卷 | 1 |
| ISSN（列印） | 1883-2490 |
Other
| Other | 19th International Display Workshops in Conjunction with Asia Display 2012, IDW/AD 2012 |
|---|---|
| 國家 | Japan |
| 城市 | Kyoto |
| 期間 | 12-12-04 → 12-12-07 |
指紋
All Science Journal Classification (ASJC) codes
- Computer Vision and Pattern Recognition
- Human-Computer Interaction
- Electrical and Electronic Engineering
- Electronic, Optical and Magnetic Materials
- Radiology Nuclear Medicine and imaging
引用此文
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Effects of Zr doping on the performance of solution-processed inzno thin-film transistors. / Liu, Ssu Yin; Su, Bo Yuan; Kao, Po Ching; Chu, Sheng Yuan.
Society for Information Display - 19th International Display Workshops 2012, IDW/AD 2012. 2012. p. 293-296 (Proceedings of the International Display Workshops; 卷 1).研究成果: Conference contribution
TY - GEN
T1 - Effects of Zr doping on the performance of solution-processed inzno thin-film transistors
AU - Liu, Ssu Yin
AU - Su, Bo Yuan
AU - Kao, Po Ching
AU - Chu, Sheng Yuan
PY - 2012/12/1
Y1 - 2012/12/1
N2 - Thin-film transistors with zirconium doping on the indium-zinc oxide as active layer by the solution-processed deposition method were fabricated and their TFT characteristics were examined. The solution-processed ZrInZnO films show high transmittance over 90% in the visible region and good electrical characteristic of Ion/Ioff ratio current over 10 5.
AB - Thin-film transistors with zirconium doping on the indium-zinc oxide as active layer by the solution-processed deposition method were fabricated and their TFT characteristics were examined. The solution-processed ZrInZnO films show high transmittance over 90% in the visible region and good electrical characteristic of Ion/Ioff ratio current over 10 5.
UR - http://www.scopus.com/inward/record.url?scp=84885895845&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=84885895845&partnerID=8YFLogxK
M3 - Conference contribution
AN - SCOPUS:84885895845
SN - 9781627486521
T3 - Proceedings of the International Display Workshops
SP - 293
EP - 296
BT - Society for Information Display - 19th International Display Workshops 2012, IDW/AD 2012
ER -