Effects of Zr doping on the performance of solution-processed inzno thin-film transistors

Ssu Yin Liu, Bo Yuan Su, Po Ching Kao, Sheng Yuan Chu

研究成果: Conference contribution

摘要

Thin-film transistors with zirconium doping on the indium-zinc oxide as active layer by the solution-processed deposition method were fabricated and their TFT characteristics were examined. The solution-processed ZrInZnO films show high transmittance over 90% in the visible region and good electrical characteristic of Ion/Ioff ratio current over 10 5.

原文English
主出版物標題Society for Information Display - 19th International Display Workshops 2012, IDW/AD 2012
頁面293-296
頁數4
出版狀態Published - 2012 十二月 1
事件19th International Display Workshops in Conjunction with Asia Display 2012, IDW/AD 2012 - Kyoto, Japan
持續時間: 2012 十二月 42012 十二月 7

出版系列

名字Proceedings of the International Display Workshops
1
ISSN(列印)1883-2490

Other

Other19th International Display Workshops in Conjunction with Asia Display 2012, IDW/AD 2012
國家Japan
城市Kyoto
期間12-12-0412-12-07

All Science Journal Classification (ASJC) codes

  • Computer Vision and Pattern Recognition
  • Human-Computer Interaction
  • Electrical and Electronic Engineering
  • Electronic, Optical and Magnetic Materials
  • Radiology Nuclear Medicine and imaging

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  • 引用此

    Liu, S. Y., Su, B. Y., Kao, P. C., & Chu, S. Y. (2012). Effects of Zr doping on the performance of solution-processed inzno thin-film transistors. 於 Society for Information Display - 19th International Display Workshops 2012, IDW/AD 2012 (頁 293-296). (Proceedings of the International Display Workshops; 卷 1).