Efficiency Dependence on Degree of Localization States in GaN-Based Asymmetric Two-Step Light-Emitting Diode With a Low Indium Content InGaN Shallow Step

Cheng Huang Kuo; Y. K. Fu; G. C. Chi; Shoou Jinn Chang

doi:10.1109/JQE.2009.2031253

Efficiency Dependence on Degree of Localization States in GaN-Based Asymmetric Two-Step Light-Emitting Diode With a Low Indium Content InGaN Shallow Step

Cheng Huang Kuo, Y. K. Fu, G. C. Chi, Shoou Jinn Chang

研究成果: Article › 同行評審

4 引文斯高帕斯（Scopus）

摘要

GaN-based asymmetric two-step light-emitting diodes (LEDs) with a low indium content (LIn) InGaN shallow step was proposed and fabricated. It was found the LIn-InGaN shallow step can significantly enhance phase separation and/or inhomogeneous indium distribution in the active In_0.27Ga_0.73N layer. By inserting an In_0.08Ga_0.92N shallow step, it was found that we can enhance LED output power by a factor of 2.27 with an injection current of 20 mA.

原文	English
頁（從 - 到）	391-395
頁數	5
期刊	IEEE Journal of Quantum Electronics
卷	46
發行號	3
DOIs	https://doi.org/10.1109/JQE.2009.2031253
出版狀態	Published - 2010 3月

All Science Journal Classification (ASJC) codes

原子與分子物理與光學
凝聚態物理學
電氣與電子工程

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10.1109/JQE.2009.2031253

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abstract = "GaN-based asymmetric two-step light-emitting diodes (LEDs) with a low indium content (LIn) InGaN shallow step was proposed and fabricated. It was found the LIn-InGaN shallow step can significantly enhance phase separation and/or inhomogeneous indium distribution in the active In0.27Ga0.73N layer. By inserting an In0.08Ga0.92N shallow step, it was found that we can enhance LED output power by a factor of 2.27 with an injection current of 20 mA.",

author = "Kuo, {Cheng Huang} and Fu, {Y. K.} and Chi, {G. C.} and Chang, {Shoou Jinn}",

year = "2010",

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AU - Kuo, Cheng Huang

AU - Fu, Y. K.

AU - Chi, G. C.

AU - Chang, Shoou Jinn

PY - 2010/3

Y1 - 2010/3

N2 - GaN-based asymmetric two-step light-emitting diodes (LEDs) with a low indium content (LIn) InGaN shallow step was proposed and fabricated. It was found the LIn-InGaN shallow step can significantly enhance phase separation and/or inhomogeneous indium distribution in the active In0.27Ga0.73N layer. By inserting an In0.08Ga0.92N shallow step, it was found that we can enhance LED output power by a factor of 2.27 with an injection current of 20 mA.

AB - GaN-based asymmetric two-step light-emitting diodes (LEDs) with a low indium content (LIn) InGaN shallow step was proposed and fabricated. It was found the LIn-InGaN shallow step can significantly enhance phase separation and/or inhomogeneous indium distribution in the active In0.27Ga0.73N layer. By inserting an In0.08Ga0.92N shallow step, it was found that we can enhance LED output power by a factor of 2.27 with an injection current of 20 mA.

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JO - IEEE Journal of Quantum Electronics

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Efficiency Dependence on Degree of Localization States in GaN-Based Asymmetric Two-Step Light-Emitting Diode With a Low Indium Content InGaN Shallow Step

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