Efficiency Dependence on Degree of Localization States in GaN-Based Asymmetric Two-Step Light-Emitting Diode With a Low Indium Content InGaN Shallow Step

Cheng Huang Kuo, Y. K. Fu, G. C. Chi, Shoou Jinn Chang

研究成果: Article

4 引文 斯高帕斯(Scopus)

摘要

GaN-based asymmetric two-step light-emitting diodes (LEDs) with a low indium content (LIn) InGaN shallow step was proposed and fabricated. It was found the LIn-InGaN shallow step can significantly enhance phase separation and/or inhomogeneous indium distribution in the active In0.27Ga0.73N layer. By inserting an In0.08Ga0.92N shallow step, it was found that we can enhance LED output power by a factor of 2.27 with an injection current of 20 mA.

原文English
頁(從 - 到)391-395
頁數5
期刊IEEE Journal of Quantum Electronics
46
發行號3
DOIs
出版狀態Published - 2010 三月

    指紋

All Science Journal Classification (ASJC) codes

  • Atomic and Molecular Physics, and Optics
  • Condensed Matter Physics
  • Electrical and Electronic Engineering

引用此