Efficiency droop characteristics in InGaN-based near ultraviolet-to-blue light-emitting diodes

Sheng Fu Yu, Ray Ming Lin, Shoou-Jinn Chang, Fu Chuan Chu

研究成果: Article

15 引文 (Scopus)

摘要

In this study, we prepared InGaN-based light-emitting diodes (LEDs) with peak emissions ranging from 400 to 445nm and investigated their efficiency droop characteristics at injection currents of up to 1 A. We found that the external quantum efficiencies (EQEs) changed dramatically when the critical current increased from 0 to 350 mA, but exhibited a similar negative slope upon increasing the current from 350mA to 1 A. The effects of piezoelectric polarization and different localized states in the active layer of the near UV-to-blue LEDs influenced the peak EQEs and the dramatic decays of the EQE droops at lower injection currents.

原文English
文章編號022102
期刊Applied Physics Express
5
發行號2
DOIs
出版狀態Published - 2012 二月 1

指紋

Quantum efficiency
Light emitting diodes
quantum efficiency
light emitting diodes
injection
Critical currents
critical current
Polarization
slopes
decay
polarization

All Science Journal Classification (ASJC) codes

  • Engineering(all)
  • Physics and Astronomy(all)

引用此文

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Efficiency droop characteristics in InGaN-based near ultraviolet-to-blue light-emitting diodes. / Yu, Sheng Fu; Lin, Ray Ming; Chang, Shoou-Jinn; Chu, Fu Chuan.

於: Applied Physics Express, 卷 5, 編號 2, 022102, 01.02.2012.

研究成果: Article

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