Efficiency enhancement of III-nitride light-emitting diodes with strain-compensated thin-barrier InGaN/AlN/GaN multiple quantum wells

Chi Ming Tsai, Chia Sheng Chang, Zhibo Xu, Wen Pin Huang, Wei-Chi Lai, Jong Shing Bow

研究成果: Article

摘要

We introduced strain-compensated thin-barrier indium gallium nitride (InGaN)/aluminum nitride (AlN)/gallium nitride (GaN) multiple quantum wells (MQWs) to replace thin-barrier InGaN/GaN MQWs. The AlN insert layers would effectively compensate the strain of the thin-barrier InGaN/GaN MQWs to improve the opto-electrical properties of light-emitting diodes (LEDs). The 120-mA light output power of thin-barrier InGaN/GaN MQW LEDs could be improved from 31.9mW to 35.3mW by introducing 20-s-growth AlN insert layers, possibly reaching almost the same 120-mA light output power of traditional thick-barrier InGaN/GaN MQWs. Moreover, the current dependent external quantum efficiency (EQE) of the thin-barrier InGaN/AlN/GaN MQW LEDs with 20-s-growth AlN insert layers also indicated the largest peak EQE, showing high efficiency in low current injection. The severe carrier overflow effect that degrades the light output efficiency of the thin-barrier InGaN/GaN MQW LED in high current injection can be suppressed by introducing thin-barrier InGaN/AlN/GaN MQW with 20-s-growth AlN insert layers.

原文English
頁(從 - 到)1207-1214
頁數8
期刊OSA Continuum
2
發行號4
DOIs
出版狀態Published - 2019 四月 15

指紋

Gallium nitride
Indium
Aluminum nitride
gallium nitrides
aluminum nitrides
Nitrides
Semiconductor quantum wells
nitrides
Light emitting diodes
indium
light emitting diodes
quantum wells
augmentation
inserts
Quantum efficiency
gallium nitride
quantum efficiency
output
injection
low currents

All Science Journal Classification (ASJC) codes

  • Electrical and Electronic Engineering
  • Electronic, Optical and Magnetic Materials
  • Atomic and Molecular Physics, and Optics

引用此文

Tsai, Chi Ming ; Chang, Chia Sheng ; Xu, Zhibo ; Huang, Wen Pin ; Lai, Wei-Chi ; Bow, Jong Shing. / Efficiency enhancement of III-nitride light-emitting diodes with strain-compensated thin-barrier InGaN/AlN/GaN multiple quantum wells. 於: OSA Continuum. 2019 ; 卷 2, 編號 4. 頁 1207-1214.
@article{df3d4135364f4a8783cf30169886d15c,
title = "Efficiency enhancement of III-nitride light-emitting diodes with strain-compensated thin-barrier InGaN/AlN/GaN multiple quantum wells",
abstract = "We introduced strain-compensated thin-barrier indium gallium nitride (InGaN)/aluminum nitride (AlN)/gallium nitride (GaN) multiple quantum wells (MQWs) to replace thin-barrier InGaN/GaN MQWs. The AlN insert layers would effectively compensate the strain of the thin-barrier InGaN/GaN MQWs to improve the opto-electrical properties of light-emitting diodes (LEDs). The 120-mA light output power of thin-barrier InGaN/GaN MQW LEDs could be improved from 31.9mW to 35.3mW by introducing 20-s-growth AlN insert layers, possibly reaching almost the same 120-mA light output power of traditional thick-barrier InGaN/GaN MQWs. Moreover, the current dependent external quantum efficiency (EQE) of the thin-barrier InGaN/AlN/GaN MQW LEDs with 20-s-growth AlN insert layers also indicated the largest peak EQE, showing high efficiency in low current injection. The severe carrier overflow effect that degrades the light output efficiency of the thin-barrier InGaN/GaN MQW LED in high current injection can be suppressed by introducing thin-barrier InGaN/AlN/GaN MQW with 20-s-growth AlN insert layers.",
author = "Tsai, {Chi Ming} and Chang, {Chia Sheng} and Zhibo Xu and Huang, {Wen Pin} and Wei-Chi Lai and Bow, {Jong Shing}",
year = "2019",
month = "4",
day = "15",
doi = "10.1364/OSAC.2.001207",
language = "English",
volume = "2",
pages = "1207--1214",
journal = "OSA Continuum",
issn = "2578-7519",
publisher = "OSA - The Optical Society",
number = "4",

}

Efficiency enhancement of III-nitride light-emitting diodes with strain-compensated thin-barrier InGaN/AlN/GaN multiple quantum wells. / Tsai, Chi Ming; Chang, Chia Sheng; Xu, Zhibo; Huang, Wen Pin; Lai, Wei-Chi; Bow, Jong Shing.

於: OSA Continuum, 卷 2, 編號 4, 15.04.2019, p. 1207-1214.

研究成果: Article

TY - JOUR

T1 - Efficiency enhancement of III-nitride light-emitting diodes with strain-compensated thin-barrier InGaN/AlN/GaN multiple quantum wells

AU - Tsai, Chi Ming

AU - Chang, Chia Sheng

AU - Xu, Zhibo

AU - Huang, Wen Pin

AU - Lai, Wei-Chi

AU - Bow, Jong Shing

PY - 2019/4/15

Y1 - 2019/4/15

N2 - We introduced strain-compensated thin-barrier indium gallium nitride (InGaN)/aluminum nitride (AlN)/gallium nitride (GaN) multiple quantum wells (MQWs) to replace thin-barrier InGaN/GaN MQWs. The AlN insert layers would effectively compensate the strain of the thin-barrier InGaN/GaN MQWs to improve the opto-electrical properties of light-emitting diodes (LEDs). The 120-mA light output power of thin-barrier InGaN/GaN MQW LEDs could be improved from 31.9mW to 35.3mW by introducing 20-s-growth AlN insert layers, possibly reaching almost the same 120-mA light output power of traditional thick-barrier InGaN/GaN MQWs. Moreover, the current dependent external quantum efficiency (EQE) of the thin-barrier InGaN/AlN/GaN MQW LEDs with 20-s-growth AlN insert layers also indicated the largest peak EQE, showing high efficiency in low current injection. The severe carrier overflow effect that degrades the light output efficiency of the thin-barrier InGaN/GaN MQW LED in high current injection can be suppressed by introducing thin-barrier InGaN/AlN/GaN MQW with 20-s-growth AlN insert layers.

AB - We introduced strain-compensated thin-barrier indium gallium nitride (InGaN)/aluminum nitride (AlN)/gallium nitride (GaN) multiple quantum wells (MQWs) to replace thin-barrier InGaN/GaN MQWs. The AlN insert layers would effectively compensate the strain of the thin-barrier InGaN/GaN MQWs to improve the opto-electrical properties of light-emitting diodes (LEDs). The 120-mA light output power of thin-barrier InGaN/GaN MQW LEDs could be improved from 31.9mW to 35.3mW by introducing 20-s-growth AlN insert layers, possibly reaching almost the same 120-mA light output power of traditional thick-barrier InGaN/GaN MQWs. Moreover, the current dependent external quantum efficiency (EQE) of the thin-barrier InGaN/AlN/GaN MQW LEDs with 20-s-growth AlN insert layers also indicated the largest peak EQE, showing high efficiency in low current injection. The severe carrier overflow effect that degrades the light output efficiency of the thin-barrier InGaN/GaN MQW LED in high current injection can be suppressed by introducing thin-barrier InGaN/AlN/GaN MQW with 20-s-growth AlN insert layers.

UR - http://www.scopus.com/inward/record.url?scp=85069155155&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=85069155155&partnerID=8YFLogxK

U2 - 10.1364/OSAC.2.001207

DO - 10.1364/OSAC.2.001207

M3 - Article

AN - SCOPUS:85069155155

VL - 2

SP - 1207

EP - 1214

JO - OSA Continuum

JF - OSA Continuum

SN - 2578-7519

IS - 4

ER -