Efficiency enhancement of III-nitride light-emitting diodes with strain-compensated thin-barrier InGaN/AlN/GaN multiple quantum wells

Chi Ming Tsai, Chia Sheng Chang, Zhibo Xu, Wen Pin Huang, Wei Chih Lai, Jong Shing Bow

研究成果: Article同行評審

1 引文 斯高帕斯(Scopus)

摘要

We introduced strain-compensated thin-barrier indium gallium nitride (InGaN)/aluminum nitride (AlN)/gallium nitride (GaN) multiple quantum wells (MQWs) to replace thin-barrier InGaN/GaN MQWs. The AlN insert layers would effectively compensate the strain of the thin-barrier InGaN/GaN MQWs to improve the opto-electrical properties of light-emitting diodes (LEDs). The 120-mA light output power of thin-barrier InGaN/GaN MQW LEDs could be improved from 31.9mW to 35.3mW by introducing 20-s-growth AlN insert layers, possibly reaching almost the same 120-mA light output power of traditional thick-barrier InGaN/GaN MQWs. Moreover, the current dependent external quantum efficiency (EQE) of the thin-barrier InGaN/AlN/GaN MQW LEDs with 20-s-growth AlN insert layers also indicated the largest peak EQE, showing high efficiency in low current injection. The severe carrier overflow effect that degrades the light output efficiency of the thin-barrier InGaN/GaN MQW LED in high current injection can be suppressed by introducing thin-barrier InGaN/AlN/GaN MQW with 20-s-growth AlN insert layers.

原文English
頁(從 - 到)1207-1214
頁數8
期刊OSA Continuum
2
發行號4
DOIs
出版狀態Published - 2019 四月 15

All Science Journal Classification (ASJC) codes

  • 電子、光磁材料
  • 原子與分子物理與光學
  • 電氣與電子工程

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