Efficiency enhancement of InGaN/GaN multiple quantum well solar cells using CdS quantum dots and distributed Bragg reflectors

Yu Lin Tsai, Chien Chung Lin, Hau Vei Han, Hsin Chu Chen, Kuo Ju Chen, Wei-Chi Lai, Jinn-Kong Sheu, Fang I. Lai, Peichen Yu, Hao Chung Kuo

研究成果: Conference contribution

摘要

In recent year, InGaN-based alloy was also considered for photovoltaic devices owing to the distinctive material properties which are benefit photovoltaic performance. However, the Indium tin oxide (ITO) layer on top, which plays a role of transparent conductive oxide (TCO), can absorb UV photons without generating photocurrent. Also, the thin absorber layer in the device, which is consequent result after compromising with limited crystal quality, has caused insufficient light absorption. In this report, we propose an approach for solving these problems. A hybrid design of InGaN/GaN multiple quantum wells (MQWs) solar cells combined with colloidal CdS quantum dots (QDs) and back side distributed Bragg reflectors (DBRs) has been demonstrated. CdS QDs provide down-conversion effect at UV regime to avoid absorption of ITO. Moreover, CdS QDs also exhibit anti-reflective feature. DBRs at the back side have effectively reflected the light back into the absorber layer. CdS QDs enhance the external quantum efficiency (EQE) for light with wavelength shorter than 400 nm, while DBRs provide a broad band enhancement in EQE, especially within the region of 400 nm ∼ 430 nm in wavelength. CdS QDs effectively achieved a power conversion efficiency enhancement as high as 7.2% compared to the device without assistance of CdS QDs. With the participation of DBRs, the power conversion efficiency enhancement has been further boosted to 14%. We believe that the hybrid design of InGaN/GaN MQWs solar cells with QDs and DBRs can be a method for high efficiency InGaN/GaN MQWs solar cells.

原文English
主出版物標題Physics, Simulation, and Photonic Engineering of Photovoltaic Devices II
DOIs
出版狀態Published - 2013 六月 10
事件2nd Symposium on Physics, Simulation, and Photonic Engineering of Photovoltaic Devices - San Francisco, CA, United States
持續時間: 2013 二月 32013 二月 7

出版系列

名字Proceedings of SPIE - The International Society for Optical Engineering
8620
ISSN(列印)0277-786X

Other

Other2nd Symposium on Physics, Simulation, and Photonic Engineering of Photovoltaic Devices
國家United States
城市San Francisco, CA
期間13-02-0313-02-07

指紋

Distributed Bragg reflectors
InGaN
Reflector
Quantum Well
Bragg reflectors
Solar Cells
Quantum Dots
Semiconductor quantum wells
Semiconductor quantum dots
Solar cells
Enhancement
solar cells
quantum dots
quantum wells
augmentation
Oxides
Quantum Efficiency
Absorber
Tin oxides
Quantum efficiency

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Computer Science Applications
  • Applied Mathematics
  • Electrical and Electronic Engineering

引用此文

Tsai, Y. L., Lin, C. C., Han, H. V., Chen, H. C., Chen, K. J., Lai, W-C., ... Kuo, H. C. (2013). Efficiency enhancement of InGaN/GaN multiple quantum well solar cells using CdS quantum dots and distributed Bragg reflectors. 於 Physics, Simulation, and Photonic Engineering of Photovoltaic Devices II [86201M] (Proceedings of SPIE - The International Society for Optical Engineering; 卷 8620). https://doi.org/10.1117/12.2005823
Tsai, Yu Lin ; Lin, Chien Chung ; Han, Hau Vei ; Chen, Hsin Chu ; Chen, Kuo Ju ; Lai, Wei-Chi ; Sheu, Jinn-Kong ; Lai, Fang I. ; Yu, Peichen ; Kuo, Hao Chung. / Efficiency enhancement of InGaN/GaN multiple quantum well solar cells using CdS quantum dots and distributed Bragg reflectors. Physics, Simulation, and Photonic Engineering of Photovoltaic Devices II. 2013. (Proceedings of SPIE - The International Society for Optical Engineering).
@inproceedings{26d637bbf0954cf487c04088371f2162,
title = "Efficiency enhancement of InGaN/GaN multiple quantum well solar cells using CdS quantum dots and distributed Bragg reflectors",
abstract = "In recent year, InGaN-based alloy was also considered for photovoltaic devices owing to the distinctive material properties which are benefit photovoltaic performance. However, the Indium tin oxide (ITO) layer on top, which plays a role of transparent conductive oxide (TCO), can absorb UV photons without generating photocurrent. Also, the thin absorber layer in the device, which is consequent result after compromising with limited crystal quality, has caused insufficient light absorption. In this report, we propose an approach for solving these problems. A hybrid design of InGaN/GaN multiple quantum wells (MQWs) solar cells combined with colloidal CdS quantum dots (QDs) and back side distributed Bragg reflectors (DBRs) has been demonstrated. CdS QDs provide down-conversion effect at UV regime to avoid absorption of ITO. Moreover, CdS QDs also exhibit anti-reflective feature. DBRs at the back side have effectively reflected the light back into the absorber layer. CdS QDs enhance the external quantum efficiency (EQE) for light with wavelength shorter than 400 nm, while DBRs provide a broad band enhancement in EQE, especially within the region of 400 nm ∼ 430 nm in wavelength. CdS QDs effectively achieved a power conversion efficiency enhancement as high as 7.2{\%} compared to the device without assistance of CdS QDs. With the participation of DBRs, the power conversion efficiency enhancement has been further boosted to 14{\%}. We believe that the hybrid design of InGaN/GaN MQWs solar cells with QDs and DBRs can be a method for high efficiency InGaN/GaN MQWs solar cells.",
author = "Tsai, {Yu Lin} and Lin, {Chien Chung} and Han, {Hau Vei} and Chen, {Hsin Chu} and Chen, {Kuo Ju} and Wei-Chi Lai and Jinn-Kong Sheu and Lai, {Fang I.} and Peichen Yu and Kuo, {Hao Chung}",
year = "2013",
month = "6",
day = "10",
doi = "10.1117/12.2005823",
language = "English",
isbn = "9780819493897",
series = "Proceedings of SPIE - The International Society for Optical Engineering",
booktitle = "Physics, Simulation, and Photonic Engineering of Photovoltaic Devices II",

}

Tsai, YL, Lin, CC, Han, HV, Chen, HC, Chen, KJ, Lai, W-C, Sheu, J-K, Lai, FI, Yu, P & Kuo, HC 2013, Efficiency enhancement of InGaN/GaN multiple quantum well solar cells using CdS quantum dots and distributed Bragg reflectors. 於 Physics, Simulation, and Photonic Engineering of Photovoltaic Devices II., 86201M, Proceedings of SPIE - The International Society for Optical Engineering, 卷 8620, 2nd Symposium on Physics, Simulation, and Photonic Engineering of Photovoltaic Devices, San Francisco, CA, United States, 13-02-03. https://doi.org/10.1117/12.2005823

Efficiency enhancement of InGaN/GaN multiple quantum well solar cells using CdS quantum dots and distributed Bragg reflectors. / Tsai, Yu Lin; Lin, Chien Chung; Han, Hau Vei; Chen, Hsin Chu; Chen, Kuo Ju; Lai, Wei-Chi; Sheu, Jinn-Kong; Lai, Fang I.; Yu, Peichen; Kuo, Hao Chung.

Physics, Simulation, and Photonic Engineering of Photovoltaic Devices II. 2013. 86201M (Proceedings of SPIE - The International Society for Optical Engineering; 卷 8620).

研究成果: Conference contribution

TY - GEN

T1 - Efficiency enhancement of InGaN/GaN multiple quantum well solar cells using CdS quantum dots and distributed Bragg reflectors

AU - Tsai, Yu Lin

AU - Lin, Chien Chung

AU - Han, Hau Vei

AU - Chen, Hsin Chu

AU - Chen, Kuo Ju

AU - Lai, Wei-Chi

AU - Sheu, Jinn-Kong

AU - Lai, Fang I.

AU - Yu, Peichen

AU - Kuo, Hao Chung

PY - 2013/6/10

Y1 - 2013/6/10

N2 - In recent year, InGaN-based alloy was also considered for photovoltaic devices owing to the distinctive material properties which are benefit photovoltaic performance. However, the Indium tin oxide (ITO) layer on top, which plays a role of transparent conductive oxide (TCO), can absorb UV photons without generating photocurrent. Also, the thin absorber layer in the device, which is consequent result after compromising with limited crystal quality, has caused insufficient light absorption. In this report, we propose an approach for solving these problems. A hybrid design of InGaN/GaN multiple quantum wells (MQWs) solar cells combined with colloidal CdS quantum dots (QDs) and back side distributed Bragg reflectors (DBRs) has been demonstrated. CdS QDs provide down-conversion effect at UV regime to avoid absorption of ITO. Moreover, CdS QDs also exhibit anti-reflective feature. DBRs at the back side have effectively reflected the light back into the absorber layer. CdS QDs enhance the external quantum efficiency (EQE) for light with wavelength shorter than 400 nm, while DBRs provide a broad band enhancement in EQE, especially within the region of 400 nm ∼ 430 nm in wavelength. CdS QDs effectively achieved a power conversion efficiency enhancement as high as 7.2% compared to the device without assistance of CdS QDs. With the participation of DBRs, the power conversion efficiency enhancement has been further boosted to 14%. We believe that the hybrid design of InGaN/GaN MQWs solar cells with QDs and DBRs can be a method for high efficiency InGaN/GaN MQWs solar cells.

AB - In recent year, InGaN-based alloy was also considered for photovoltaic devices owing to the distinctive material properties which are benefit photovoltaic performance. However, the Indium tin oxide (ITO) layer on top, which plays a role of transparent conductive oxide (TCO), can absorb UV photons without generating photocurrent. Also, the thin absorber layer in the device, which is consequent result after compromising with limited crystal quality, has caused insufficient light absorption. In this report, we propose an approach for solving these problems. A hybrid design of InGaN/GaN multiple quantum wells (MQWs) solar cells combined with colloidal CdS quantum dots (QDs) and back side distributed Bragg reflectors (DBRs) has been demonstrated. CdS QDs provide down-conversion effect at UV regime to avoid absorption of ITO. Moreover, CdS QDs also exhibit anti-reflective feature. DBRs at the back side have effectively reflected the light back into the absorber layer. CdS QDs enhance the external quantum efficiency (EQE) for light with wavelength shorter than 400 nm, while DBRs provide a broad band enhancement in EQE, especially within the region of 400 nm ∼ 430 nm in wavelength. CdS QDs effectively achieved a power conversion efficiency enhancement as high as 7.2% compared to the device without assistance of CdS QDs. With the participation of DBRs, the power conversion efficiency enhancement has been further boosted to 14%. We believe that the hybrid design of InGaN/GaN MQWs solar cells with QDs and DBRs can be a method for high efficiency InGaN/GaN MQWs solar cells.

UR - http://www.scopus.com/inward/record.url?scp=84878554758&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=84878554758&partnerID=8YFLogxK

U2 - 10.1117/12.2005823

DO - 10.1117/12.2005823

M3 - Conference contribution

AN - SCOPUS:84878554758

SN - 9780819493897

T3 - Proceedings of SPIE - The International Society for Optical Engineering

BT - Physics, Simulation, and Photonic Engineering of Photovoltaic Devices II

ER -

Tsai YL, Lin CC, Han HV, Chen HC, Chen KJ, Lai W-C 等. Efficiency enhancement of InGaN/GaN multiple quantum well solar cells using CdS quantum dots and distributed Bragg reflectors. 於 Physics, Simulation, and Photonic Engineering of Photovoltaic Devices II. 2013. 86201M. (Proceedings of SPIE - The International Society for Optical Engineering). https://doi.org/10.1117/12.2005823