Efficiency improvement of GaN-based light-emitting diodes by direct wet etching of indium-tin-oxide layer

S. Li, D. S. Kuo, C. H. Liu, S. C. Hung, S. J. Chang

研究成果: Article

3 引文 (Scopus)

摘要

The authors propose a simple direct wet etching method to texture the indium-tin-oxide (ITO) p-contact layer of GaNbased light-emitting diodes (LEDs). It was found that highdensity ITO nanorods with average diameter of 140 nm and average height of 120 nm were formed after the LED samples were immersed in a solution consists of HCl (30%), FeCl3 (30%)and de-ionised water (40%) for 2 min at room temperature. It was also found that output power of the LEDs with 2 min direct wet etching was 21% higher than that of conventional LEDs. Furthermore, it was found that such enhancement should be attributed to the enhancedphoton extraction from the front surface of the LED chip.

原文English
頁(從 - 到)303-306
頁數4
期刊IET Optoelectronics
6
發行號6
DOIs
出版狀態Published - 2012 十二月 1

指紋

Wet etching
Tin oxides
indium oxides
Indium
tin oxides
Light emitting diodes
light emitting diodes
etching
Nanorods
nanorods
textures
Textures
chips
augmentation
output
room temperature
water
Water
Temperature

All Science Journal Classification (ASJC) codes

  • Atomic and Molecular Physics, and Optics
  • Electrical and Electronic Engineering

引用此文

Li, S. ; Kuo, D. S. ; Liu, C. H. ; Hung, S. C. ; Chang, S. J. / Efficiency improvement of GaN-based light-emitting diodes by direct wet etching of indium-tin-oxide layer. 於: IET Optoelectronics. 2012 ; 卷 6, 編號 6. 頁 303-306.
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Efficiency improvement of GaN-based light-emitting diodes by direct wet etching of indium-tin-oxide layer. / Li, S.; Kuo, D. S.; Liu, C. H.; Hung, S. C.; Chang, S. J.

於: IET Optoelectronics, 卷 6, 編號 6, 01.12.2012, p. 303-306.

研究成果: Article

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AU - Chang, S. J.

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