Efficiency improvement of short-period InGaN/GaN multiple-quantum well solar cells with H2 in the GaN cap layer

Wei-Chi Lai, Ya Yu Yang, Ray Hua Horng

研究成果: Article

摘要

The thick-well InGaN/GaN short period multiple quantum well solar cells (SCs) with H2 in the GaN cap layer exhibits an improved open-circuit voltage, fill factor, and conversion efficiency η compared with those of SCs without the ramped H2 in the GaN cap layer. The η of the SC with the ramped H2 in the GaN cap layer (0.77%) shows a 67.4% improvement compared with that of the SC without the ramped H2 (0.46%). Furthermore, the η of SC with patterned sapphire substrate (PSS) (1.36%) indicates a 76.6% improvement compared with that of SC without PSS (0.77%).

原文English
文章編號6542659
頁(從 - 到)953-956
頁數4
期刊IEEE/OSA Journal of Display Technology
9
發行號12
DOIs
出版狀態Published - 2013 十二月 2

指紋

caps
Semiconductor quantum wells
Solar cells
solar cells
quantum wells
Aluminum Oxide
Sapphire
sapphire
Open circuit voltage
Substrates
open circuit voltage
Conversion efficiency

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Electrical and Electronic Engineering

引用此文

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abstract = "The thick-well InGaN/GaN short period multiple quantum well solar cells (SCs) with H2 in the GaN cap layer exhibits an improved open-circuit voltage, fill factor, and conversion efficiency η compared with those of SCs without the ramped H2 in the GaN cap layer. The η of the SC with the ramped H2 in the GaN cap layer (0.77{\%}) shows a 67.4{\%} improvement compared with that of the SC without the ramped H2 (0.46{\%}). Furthermore, the η of SC with patterned sapphire substrate (PSS) (1.36{\%}) indicates a 76.6{\%} improvement compared with that of SC without PSS (0.77{\%}).",
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Efficiency improvement of short-period InGaN/GaN multiple-quantum well solar cells with H2 in the GaN cap layer. / Lai, Wei-Chi; Yang, Ya Yu; Horng, Ray Hua.

於: IEEE/OSA Journal of Display Technology, 卷 9, 編號 12, 6542659, 02.12.2013, p. 953-956.

研究成果: Article

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