Efficiency improvement of the light-emitting diodes by the lateral overgrowth GaN on an AlN nanorod template

Wen Yi Lan, Yu Feng Yin, Chen Hung Tsai, Mu Xin Ma, Hsiang Wei Li, Wei Chi Lai, Jianjang Huang

研究成果: Conference contribution

摘要

With the rapid development of GaN light-emitting diodes (LEDs), LEDs have been utilized in various ways. However, the quality of the GaN epi-structure has been a popular topic. In order to achieve higher internal quantum efficiency (IQE), LEDs have to be made with few defects during the epitaxy growth. Here we propose an AlN nanorod template grown on the sapphire substrate by vapor-liquid-solid (VLS) method. The voids near the AlN nanorods indicate a modification of dislocation with a lateral overgrowth. A strain relaxation and a better IQE in the epi-layer are observed in the Raman spectroscopy and temperature-dependent photoluminescence (PL). As a result, the IQE of the device with the proposed AlN nanorod template is increased 12.2% as compared with the reference sample without AlN nanorods.

原文English
主出版物標題Fourteenth International Conference on Solid State Lighting and LED-Based Illumination Systems
編輯Nikolaus Dietz, Jian-Jang Huang, Matthew H. Kane, Jianzhong Jiao
發行者SPIE
ISBN(電子)9781628417371
DOIs
出版狀態Published - 2015 一月 1
事件14th International Conference on Solid State Lighting and LED-Based Illumination Systems - San Diego, United States
持續時間: 2015 八月 122015 八月 13

出版系列

名字Proceedings of SPIE - The International Society for Optical Engineering
9571
ISSN(列印)0277-786X
ISSN(電子)1996-756X

Other

Other14th International Conference on Solid State Lighting and LED-Based Illumination Systems
國家United States
城市San Diego
期間15-08-1215-08-13

指紋

Aluminum Nitride
Nanorods
Diode
nanorods
Light emitting diodes
Template
Quantum Efficiency
Lateral
light emitting diodes
templates
Quantum efficiency
quantum efficiency
Internal
Strain relaxation
Epitaxy
Aluminum Oxide
Sapphire
Raman Spectroscopy
Photoluminescence
Voids

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Computer Science Applications
  • Applied Mathematics
  • Electrical and Electronic Engineering

引用此文

Lan, W. Y., Yin, Y. F., Tsai, C. H., Ma, M. X., Li, H. W., Lai, W. C., & Huang, J. (2015). Efficiency improvement of the light-emitting diodes by the lateral overgrowth GaN on an AlN nanorod template. 於 N. Dietz, J-J. Huang, M. H. Kane, & J. Jiao (編輯), Fourteenth International Conference on Solid State Lighting and LED-Based Illumination Systems [95710O] (Proceedings of SPIE - The International Society for Optical Engineering; 卷 9571). SPIE. https://doi.org/10.1117/12.2188055
Lan, Wen Yi ; Yin, Yu Feng ; Tsai, Chen Hung ; Ma, Mu Xin ; Li, Hsiang Wei ; Lai, Wei Chi ; Huang, Jianjang. / Efficiency improvement of the light-emitting diodes by the lateral overgrowth GaN on an AlN nanorod template. Fourteenth International Conference on Solid State Lighting and LED-Based Illumination Systems. 編輯 / Nikolaus Dietz ; Jian-Jang Huang ; Matthew H. Kane ; Jianzhong Jiao. SPIE, 2015. (Proceedings of SPIE - The International Society for Optical Engineering).
@inproceedings{7f106a0db2ae4fc5b579df531375fe37,
title = "Efficiency improvement of the light-emitting diodes by the lateral overgrowth GaN on an AlN nanorod template",
abstract = "With the rapid development of GaN light-emitting diodes (LEDs), LEDs have been utilized in various ways. However, the quality of the GaN epi-structure has been a popular topic. In order to achieve higher internal quantum efficiency (IQE), LEDs have to be made with few defects during the epitaxy growth. Here we propose an AlN nanorod template grown on the sapphire substrate by vapor-liquid-solid (VLS) method. The voids near the AlN nanorods indicate a modification of dislocation with a lateral overgrowth. A strain relaxation and a better IQE in the epi-layer are observed in the Raman spectroscopy and temperature-dependent photoluminescence (PL). As a result, the IQE of the device with the proposed AlN nanorod template is increased 12.2{\%} as compared with the reference sample without AlN nanorods.",
author = "Lan, {Wen Yi} and Yin, {Yu Feng} and Tsai, {Chen Hung} and Ma, {Mu Xin} and Li, {Hsiang Wei} and Lai, {Wei Chi} and Jianjang Huang",
year = "2015",
month = "1",
day = "1",
doi = "10.1117/12.2188055",
language = "English",
series = "Proceedings of SPIE - The International Society for Optical Engineering",
publisher = "SPIE",
editor = "Nikolaus Dietz and Jian-Jang Huang and Kane, {Matthew H.} and Jianzhong Jiao",
booktitle = "Fourteenth International Conference on Solid State Lighting and LED-Based Illumination Systems",
address = "United States",

}

Lan, WY, Yin, YF, Tsai, CH, Ma, MX, Li, HW, Lai, WC & Huang, J 2015, Efficiency improvement of the light-emitting diodes by the lateral overgrowth GaN on an AlN nanorod template. 於 N Dietz, J-J Huang, MH Kane & J Jiao (編輯), Fourteenth International Conference on Solid State Lighting and LED-Based Illumination Systems., 95710O, Proceedings of SPIE - The International Society for Optical Engineering, 卷 9571, SPIE, 14th International Conference on Solid State Lighting and LED-Based Illumination Systems, San Diego, United States, 15-08-12. https://doi.org/10.1117/12.2188055

Efficiency improvement of the light-emitting diodes by the lateral overgrowth GaN on an AlN nanorod template. / Lan, Wen Yi; Yin, Yu Feng; Tsai, Chen Hung; Ma, Mu Xin; Li, Hsiang Wei; Lai, Wei Chi; Huang, Jianjang.

Fourteenth International Conference on Solid State Lighting and LED-Based Illumination Systems. 編輯 / Nikolaus Dietz; Jian-Jang Huang; Matthew H. Kane; Jianzhong Jiao. SPIE, 2015. 95710O (Proceedings of SPIE - The International Society for Optical Engineering; 卷 9571).

研究成果: Conference contribution

TY - GEN

T1 - Efficiency improvement of the light-emitting diodes by the lateral overgrowth GaN on an AlN nanorod template

AU - Lan, Wen Yi

AU - Yin, Yu Feng

AU - Tsai, Chen Hung

AU - Ma, Mu Xin

AU - Li, Hsiang Wei

AU - Lai, Wei Chi

AU - Huang, Jianjang

PY - 2015/1/1

Y1 - 2015/1/1

N2 - With the rapid development of GaN light-emitting diodes (LEDs), LEDs have been utilized in various ways. However, the quality of the GaN epi-structure has been a popular topic. In order to achieve higher internal quantum efficiency (IQE), LEDs have to be made with few defects during the epitaxy growth. Here we propose an AlN nanorod template grown on the sapphire substrate by vapor-liquid-solid (VLS) method. The voids near the AlN nanorods indicate a modification of dislocation with a lateral overgrowth. A strain relaxation and a better IQE in the epi-layer are observed in the Raman spectroscopy and temperature-dependent photoluminescence (PL). As a result, the IQE of the device with the proposed AlN nanorod template is increased 12.2% as compared with the reference sample without AlN nanorods.

AB - With the rapid development of GaN light-emitting diodes (LEDs), LEDs have been utilized in various ways. However, the quality of the GaN epi-structure has been a popular topic. In order to achieve higher internal quantum efficiency (IQE), LEDs have to be made with few defects during the epitaxy growth. Here we propose an AlN nanorod template grown on the sapphire substrate by vapor-liquid-solid (VLS) method. The voids near the AlN nanorods indicate a modification of dislocation with a lateral overgrowth. A strain relaxation and a better IQE in the epi-layer are observed in the Raman spectroscopy and temperature-dependent photoluminescence (PL). As a result, the IQE of the device with the proposed AlN nanorod template is increased 12.2% as compared with the reference sample without AlN nanorods.

UR - http://www.scopus.com/inward/record.url?scp=84951958619&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=84951958619&partnerID=8YFLogxK

U2 - 10.1117/12.2188055

DO - 10.1117/12.2188055

M3 - Conference contribution

AN - SCOPUS:84951958619

T3 - Proceedings of SPIE - The International Society for Optical Engineering

BT - Fourteenth International Conference on Solid State Lighting and LED-Based Illumination Systems

A2 - Dietz, Nikolaus

A2 - Huang, Jian-Jang

A2 - Kane, Matthew H.

A2 - Jiao, Jianzhong

PB - SPIE

ER -

Lan WY, Yin YF, Tsai CH, Ma MX, Li HW, Lai WC 等. Efficiency improvement of the light-emitting diodes by the lateral overgrowth GaN on an AlN nanorod template. 於 Dietz N, Huang J-J, Kane MH, Jiao J, 編輯, Fourteenth International Conference on Solid State Lighting and LED-Based Illumination Systems. SPIE. 2015. 95710O. (Proceedings of SPIE - The International Society for Optical Engineering). https://doi.org/10.1117/12.2188055