摘要
We demonstrate efficient hybrid inorganic/organic pin photovoltaic (PV) devices with a p-type-doped hydrogenated amorphous silicon (a-Si:H), intrinsic a-Si:H, and an organic semiconductor, pentacene. The correlation between the electrical properties of the PV devices and the morphological properties of the pentacene films were investigated using absorption spectroscopy, X-ray diffraction, and scanning electron microscopy. The maximum power conversion efficiency can be increased by one order with respect to the devices using different thicknesses of a pentacene layer from 0.32% at 10 nm to above 3.0% at 30 nm. Photocarriers in PVs are suggested to be mainly generated in the intrinsic a-Si:H layer. The pentacene layer is used as the exciton-blocking and electron-transport layer. Thus, the structural quality of pentacene films plays an important role in PV performance.
原文 | English |
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頁(從 - 到) | 2407-2411 |
頁數 | 5 |
期刊 | Solar Energy Materials and Solar Cells |
卷 | 95 |
發行號 | 8 |
DOIs | |
出版狀態 | Published - 2011 8月 |
All Science Journal Classification (ASJC) codes
- 電子、光磁材料
- 可再生能源、永續發展與環境
- 表面、塗料和薄膜