Elasto-partial hydrodynamic contact model for chemical mechanical polishing

Hung Jung Tsai, Yeau Ren Jeng, Pay Yau Huang

研究成果: Article同行評審

10 引文 斯高帕斯(Scopus)

摘要

Chemical mechanical polishing (CMP) has become a primary technique for the planarization of semiconductor wafers in submicrometer device fabrication. Increasing demands for high uniformity and dimensional precision make previously discountable levels of asperity, powder slurry, and wafer-pad contact significant. In this study, an improved model considering both the elastic microcontact mechanism and the grain flow with roughness effects is proposed. The model applies the average lubrication equation with the partial hydrodynamic lubrication theory and elastic microcontact theory proposed by Greenwood and Williamson. The external force acting on the wafer is supported by the partial hydrodynamic slurry pressure in the noncontact area and the surface asperity contact force in the contact area. This model predicts slurry flow film thickness under a variety of the CMP parameters, including applied load, rotation speed, particle size, and pad roughness. The results compare well with experimental data in the literature. Furthermore, the contact ratio of area and removal rate are studied and discussed.The Electrochemical Society

原文English
文章編號071612JES
頁(從 - 到)G1072-G1077
期刊Journal of the Electrochemical Society
153
發行號12
DOIs
出版狀態Published - 2006 十一月 14

All Science Journal Classification (ASJC) codes

  • 電子、光磁材料
  • 可再生能源、永續發展與環境
  • 表面、塗料和薄膜
  • 電化學
  • 材料化學

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