Electric-field controllable photoluminescence in porous silicon

J. T. Lue, K. Y. Lo, S. K. Ma, C. L. Chen, C. S. Chang

研究成果: Article同行評審

9 引文 斯高帕斯(Scopus)

摘要

Intense photoluminescences (PL) at wavelenghts near 600 nm are observed when either the (100) or (111) surface of the electrochemically etched silicon wafers are illuminated by the 514.5 nm argon laser line. A fascinating phenomenon has been discovered indicating that the PL intensity can be suppressed exhaustively by applying an electric field parallel to the surface. The PL recovers its intensity very slowly when the bias is taken off, suggesting that the slow relaxation of the accumulate charges inside the porous silicon.

原文English
頁(從 - 到)593-596
頁數4
期刊Solid State Communications
86
發行號9
DOIs
出版狀態Published - 1993 6月

All Science Journal Classification (ASJC) codes

  • 化學 (全部)
  • 凝聚態物理學
  • 材料化學

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