Electric-Field-Controlled Magnetoelectric RAM: Progress, Challenges, and Scaling

Pedram Khalili Amiri, Juan G. Alzate, Xue Qing Cai, Farbod Ebrahimi, Qi Hu, Kin Wong, Cécile Grèzes, Hochul Lee, Guoqiang Yu, Xiang Li, Mustafa Akyol, Qiming Shao, Jordan A. Katine, Jürgen Langer, Berthold Ocker, Kang L. Wang

研究成果: Article同行評審

76 引文 斯高帕斯(Scopus)

摘要

We review the recent progress in the development of magnetoelectric RAM (MeRAM) based on electric-field-controlled writing in magnetic tunnel junctions (MTJs). MeRAM uses the tunneling magnetoresistance effect for readout in a two-terminal memory element, similar to other types of magnetic RAM. However, the writing of information is performed by voltage control of magnetic anisotropy (VCMA) at the interface of an MgO tunnel barrier and the CoFeB-based free layer, as opposed to current-controlled (e.g., spin-transfer torque or spin-orbit torque) mechanisms. We present results on voltage-induced switching of MTJs in both resonant (precessional) and thermally activated regimes, which demonstrate fast (<1 ns) and ultralow-power (<40 fJ/bit) write operations at voltages ∼1.5-2 V. We also discuss the implications of the VCMA-based write mechanism on memory array design, highlighting the possibility of crossbar implementation for high bit density. Results are presented from a 1 kbit MeRAM test array. Endurance and voltage scaling data are presented. The scaling behavior is analyzed, and material-level requirements are discussed for the translation of MeRAM into mainstream memory applications.

原文English
文章編號7120957
期刊IEEE Transactions on Magnetics
51
發行號11
DOIs
出版狀態Published - 2015 十一月 1

All Science Journal Classification (ASJC) codes

  • 電子、光磁材料
  • 電氣與電子工程

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