Electric-field-induced submicrosecond resistive switching

N. Das, S. Tsui, Y. Y. Xue, Y. Q. Wang, C. W. Chu

研究成果: Article同行評審

42 引文 斯高帕斯(Scopus)

摘要

Electric-field-induced resistive switching in metal-oxide interfaces has attracted extensive recent interest. While many agree that lattice defects play a key role, details of the physical processes are far from clear. There is debate, for example, regarding whether the electromigration of pre-existing point defects or the field-created larger lattice defects dominates the switch. We investigate several Ag-Pr0.7 Ca0.3 MnO3 samples exhibiting either submicrosecond fast switching or slow quasistatic dc switching. It is found that the carrier trapping potentials are very different for the pre-existing point defects associated with doping (and/or electromigration) and for the defects responsible for the submicrosecond fast switching. Creation/removal of the defects with more severe lattice distortions and spatial spreading (trapping potential ≥0.35 eV), therefore, should be the dominating mechanism during submicrosecond switching. On the other hand, the shallow defects (trapping potential ≪0.2 eV) associated with doping/annealing are most likely responsible for the resistance hysteresis (slow switch) during quasistatic voltage sweep.

原文English
文章編號235418
期刊Physical Review B - Condensed Matter and Materials Physics
78
發行號23
DOIs
出版狀態Published - 2008 12月 1

All Science Journal Classification (ASJC) codes

  • 電子、光磁材料
  • 凝聚態物理學

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