Electric-field-induced thermally assisted switching of monodomain magnetic bits

P. Khalili Amiri, P. Upadhyaya, J. G. Alzate, K. L. Wang

研究成果: Article同行評審

32 引文 斯高帕斯(Scopus)

摘要

We present a study of the electric-field-induced switching of magnetic memory bits exhibiting interfacial voltage-controlled magnetic anisotropy (VCMA). Switching is analyzed in the single-domain approximation and in the thermally activated regime. The effects of external magnetic fields, magnitudes of the perpendicular anisotropy and VCMA effect, and voltage pulse width on the switching voltage are discussed. Both in-plane and perpendicular magnetic memory bits are considered. Experimental results are presented and compared to the theoretical model.

原文English
文章編號013912
期刊Journal of Applied Physics
113
發行號1
DOIs
出版狀態Published - 2013 一月 7

All Science Journal Classification (ASJC) codes

  • 物理與天文學 (全部)

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