Electric field measuring by phase selective photoreflectance

J. S. Hwang, W. Y. Chou, S. L. Tyan, Y. C. Wang, H. Shen

研究成果: Conference article

摘要

The built-in electric fields in a MBE grown δ-doped GaAs homojunction have been investigated by the techniques of photoreflectance and phase suppression. Two Franz-Keldysh oscillation features originating from two different fields in the structure superimpose with each other in the photoreflectance spectrum. By properly selecting the reference phase of the lock-in amplifier, one of the features can be suppressed, thus enabling us to determine the electric fields from two different regions. We have demonstrated that only two PR spectra, in-phase and out-phase components, are needed to find the phase angle which suppresses one of the features. The electric field in the top layer is 3.5 ± 0.2 × 105 V/cm, which is in good agreement with theoretical calculation. The electric field in the buffer layer is 1.2 ± 0.1 × 104 V/cm, which suggests the existence of interface states at the buffer/substrate interface.

原文English
頁(從 - 到)275-280
頁數6
期刊Materials Research Society Symposium - Proceedings
421
DOIs
出版狀態Published - 1996
事件Proceedings of the 1996 MRS Spring Meeting - San Francisco, CA, USA
持續時間: 1996 四月 81996 四月 12

All Science Journal Classification (ASJC) codes

  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanics of Materials
  • Mechanical Engineering

指紋 深入研究「Electric field measuring by phase selective photoreflectance」主題。共同形成了獨特的指紋。

  • 引用此