The built-in electric fields in a MBE grown δ-doped GaAs homojunction have been investigated by the techniques of photoreflectance and phase suppression. Two Franz-Keldysh oscillation features originating from two different fields in the structure superimpose with each other in the photoreflectance spectrum. By properly selecting the reference phase of the lock-in amplifier, one of the features can be suppressed, thus enabling us to determine the electric fields from two different regions. We have demonstrated that only two PR spectra, in-phase and out-phase components, are needed to find the phase angle which suppresses one of the features. The electric field in the top layer is 3.5 ± 0.2 × 105 V/cm, which is in good agreement with theoretical calculation. The electric field in the buffer layer is 1.2 ± 0.1 × 104 V/cm, which suggests the existence of interface states at the buffer/substrate interface.
|頁（從 - 到）||275-280|
|期刊||Materials Research Society Symposium - Proceedings|
|出版狀態||Published - 1996|
|事件||Proceedings of the 1996 MRS Spring Meeting - San Francisco, CA, USA|
持續時間: 1996 四月 8 → 1996 四月 12
All Science Journal Classification (ASJC) codes