Electrical and optical properties of GaAs/AlGaAs multiple quantum wells grown on Si substrates

Y. J. Mii, R. P.G. Karunasiri, K. L. Wang

研究成果: Article同行評審

5 引文 斯高帕斯(Scopus)

摘要

Intersubband infrared absorption and sequential resonant tunneling in GaAs/AlGaAs multiple quantum wells grown on Si substrates are reported for the first time. The observed electrical and optical properties of the multiple quantum wells on Si are comparable to similar structures grown directly on GaAs substrates. This suggests the potential application of integrating the GaAs/AlGaAs multiple quantum well devices with Si very large scale integrated circuits for long-wavelength (near 10 μm) infrared detection.

原文English
頁(從 - 到)2050-2052
頁數3
期刊Applied Physics Letters
53
發行號21
DOIs
出版狀態Published - 1988

All Science Journal Classification (ASJC) codes

  • 物理與天文學(雜項)

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