Electrical and optical properties of microwave dielectric thin films prepared by pulsed laser deposition

Y. C. Chen, H. F. Cheng, I. N. Lin

研究成果: Conference article同行評審

3 引文 斯高帕斯(Scopus)

摘要

Bi2(Zn1/3Nb2/3)2 O7, BiZN, materials possess high dielectric constant and low loss factor in microwave frequency region. They have good potential for device application, especially in the form of thin films. However, the microwave dielectric properties of a thin film are very difficult to be accurately measured. Evaluation on the dielectric behavior of the films through the performance of the microstrip line devices made of these films involves metallic conduction and stray field losses. A novel measuring technique, which can directly evaluate the microwave dielectric properties of a thin film is thus urgently needed. In this paper, BiZN thin films were grown on [100] MgO single crystal substrates using pulsed laser deposition process. The high-frequency dielectric properties of thus obtained thin films were determined using optical transmission spectroscopy (OTS). The [100] preferentially oriented films with pyrochlore structure can be obtained for the thin films deposited at 400-600°C substrate temperature under 0.1 mbar oxygen pressure. OTS measurements reveal that the index of refraction (n=1.95-2.35) and absorption coefficient (κ=0.28 × 10-4-2.25 × 10-4 nm-1) of the films vary insignificantly with the crystallinity of the BiZN films.

原文English
頁(從 - 到)33-43
頁數11
期刊Integrated Ferroelectrics
32
發行號1-4
出版狀態Published - 2001 1月 1
事件12th International Symposium on Integrated Ferroelectrics - Aachen, Germany
持續時間: 2000 3月 122000 3月 15

All Science Journal Classification (ASJC) codes

  • 電子、光磁材料
  • 控制與系統工程
  • 陶瓷和複合材料
  • 凝聚態物理學
  • 電氣與電子工程
  • 材料化學

指紋

深入研究「Electrical and optical properties of microwave dielectric thin films prepared by pulsed laser deposition」主題。共同形成了獨特的指紋。

引用此