Electrical and reliability performances of stacked HfO2/Al2O3 MOS-HEMTs

Bo Yi Chou, Han Yin Liu, Wei Chou Hsu, Ching Sung Lee, Yu Sheng Wu, En Ping Yao

研究成果: Conference contribution

1 引文 (Scopus)

摘要

We propose and demonstrate an Al0.27Ga0.73N/GaN metal-oxide-semiconductor high electron mobility transistor (MOS-HEMT) with the HfO2/Al2O3 dual gate dielectrics by using sputtering/hydrogen peroxide (H2O2) oxidation techniques. The present HfO2/Al2O3 dual gate dielectrics MOS-HEMT can combine the advantages of both dielectric properties and the device performances such as output current, device gain, off/on-state breakdown, pulsed I-V, high-frequency, and reliability performances under on-state stress are investigated with respect to Schottky-gate HEMT and single Al2O3 gate dielectric MOS-HEMT. In addition, the present MOS-HEMT shows the superior improvements of DC/RF performances, the RF current collapse, and the reliability characteristics as compared with other devices in this work.

原文English
主出版物標題Proceedings - 2014 International Conference on Information Science, Electronics and Electrical Engineering, ISEEE 2014
編輯Xiaohong Jiang, Shaozi Li, Yun Cheng, Ying Dai
發行者Institute of Electrical and Electronics Engineers Inc.
頁面977-981
頁數5
ISBN(電子)9781479931965
DOIs
出版狀態Published - 2014 十一月 5
事件2014 International Conference on Information Science, Electronics and Electrical Engineering, ISEEE 2014 - Sapporo City, Hokkaido, Japan
持續時間: 2014 四月 262014 四月 28

出版系列

名字Proceedings - 2014 International Conference on Information Science, Electronics and Electrical Engineering, ISEEE 2014
2

Other

Other2014 International Conference on Information Science, Electronics and Electrical Engineering, ISEEE 2014
國家Japan
城市Sapporo City, Hokkaido
期間14-04-2614-04-28

指紋

High electron mobility transistors
Gate dielectrics
Metals
Gates (transistor)
Hydrogen peroxide
Dielectric properties
Sputtering
Oxidation
Oxide semiconductors

All Science Journal Classification (ASJC) codes

  • Electrical and Electronic Engineering

引用此文

Chou, B. Y., Liu, H. Y., Hsu, W. C., Lee, C. S., Wu, Y. S., & Yao, E. P. (2014). Electrical and reliability performances of stacked HfO2/Al2O3 MOS-HEMTs. 於 X. Jiang, S. Li, Y. Cheng, & Y. Dai (編輯), Proceedings - 2014 International Conference on Information Science, Electronics and Electrical Engineering, ISEEE 2014 (頁 977-981). [6947814] (Proceedings - 2014 International Conference on Information Science, Electronics and Electrical Engineering, ISEEE 2014; 卷 2). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/InfoSEEE.2014.6947814
Chou, Bo Yi ; Liu, Han Yin ; Hsu, Wei Chou ; Lee, Ching Sung ; Wu, Yu Sheng ; Yao, En Ping. / Electrical and reliability performances of stacked HfO2/Al2O3 MOS-HEMTs. Proceedings - 2014 International Conference on Information Science, Electronics and Electrical Engineering, ISEEE 2014. 編輯 / Xiaohong Jiang ; Shaozi Li ; Yun Cheng ; Ying Dai. Institute of Electrical and Electronics Engineers Inc., 2014. 頁 977-981 (Proceedings - 2014 International Conference on Information Science, Electronics and Electrical Engineering, ISEEE 2014).
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abstract = "We propose and demonstrate an Al0.27Ga0.73N/GaN metal-oxide-semiconductor high electron mobility transistor (MOS-HEMT) with the HfO2/Al2O3 dual gate dielectrics by using sputtering/hydrogen peroxide (H2O2) oxidation techniques. The present HfO2/Al2O3 dual gate dielectrics MOS-HEMT can combine the advantages of both dielectric properties and the device performances such as output current, device gain, off/on-state breakdown, pulsed I-V, high-frequency, and reliability performances under on-state stress are investigated with respect to Schottky-gate HEMT and single Al2O3 gate dielectric MOS-HEMT. In addition, the present MOS-HEMT shows the superior improvements of DC/RF performances, the RF current collapse, and the reliability characteristics as compared with other devices in this work.",
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Chou, BY, Liu, HY, Hsu, WC, Lee, CS, Wu, YS & Yao, EP 2014, Electrical and reliability performances of stacked HfO2/Al2O3 MOS-HEMTs. 於 X Jiang, S Li, Y Cheng & Y Dai (編輯), Proceedings - 2014 International Conference on Information Science, Electronics and Electrical Engineering, ISEEE 2014., 6947814, Proceedings - 2014 International Conference on Information Science, Electronics and Electrical Engineering, ISEEE 2014, 卷 2, Institute of Electrical and Electronics Engineers Inc., 頁 977-981, 2014 International Conference on Information Science, Electronics and Electrical Engineering, ISEEE 2014, Sapporo City, Hokkaido, Japan, 14-04-26. https://doi.org/10.1109/InfoSEEE.2014.6947814

Electrical and reliability performances of stacked HfO2/Al2O3 MOS-HEMTs. / Chou, Bo Yi; Liu, Han Yin; Hsu, Wei Chou; Lee, Ching Sung; Wu, Yu Sheng; Yao, En Ping.

Proceedings - 2014 International Conference on Information Science, Electronics and Electrical Engineering, ISEEE 2014. 編輯 / Xiaohong Jiang; Shaozi Li; Yun Cheng; Ying Dai. Institute of Electrical and Electronics Engineers Inc., 2014. p. 977-981 6947814 (Proceedings - 2014 International Conference on Information Science, Electronics and Electrical Engineering, ISEEE 2014; 卷 2).

研究成果: Conference contribution

TY - GEN

T1 - Electrical and reliability performances of stacked HfO2/Al2O3 MOS-HEMTs

AU - Chou, Bo Yi

AU - Liu, Han Yin

AU - Hsu, Wei Chou

AU - Lee, Ching Sung

AU - Wu, Yu Sheng

AU - Yao, En Ping

PY - 2014/11/5

Y1 - 2014/11/5

N2 - We propose and demonstrate an Al0.27Ga0.73N/GaN metal-oxide-semiconductor high electron mobility transistor (MOS-HEMT) with the HfO2/Al2O3 dual gate dielectrics by using sputtering/hydrogen peroxide (H2O2) oxidation techniques. The present HfO2/Al2O3 dual gate dielectrics MOS-HEMT can combine the advantages of both dielectric properties and the device performances such as output current, device gain, off/on-state breakdown, pulsed I-V, high-frequency, and reliability performances under on-state stress are investigated with respect to Schottky-gate HEMT and single Al2O3 gate dielectric MOS-HEMT. In addition, the present MOS-HEMT shows the superior improvements of DC/RF performances, the RF current collapse, and the reliability characteristics as compared with other devices in this work.

AB - We propose and demonstrate an Al0.27Ga0.73N/GaN metal-oxide-semiconductor high electron mobility transistor (MOS-HEMT) with the HfO2/Al2O3 dual gate dielectrics by using sputtering/hydrogen peroxide (H2O2) oxidation techniques. The present HfO2/Al2O3 dual gate dielectrics MOS-HEMT can combine the advantages of both dielectric properties and the device performances such as output current, device gain, off/on-state breakdown, pulsed I-V, high-frequency, and reliability performances under on-state stress are investigated with respect to Schottky-gate HEMT and single Al2O3 gate dielectric MOS-HEMT. In addition, the present MOS-HEMT shows the superior improvements of DC/RF performances, the RF current collapse, and the reliability characteristics as compared with other devices in this work.

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M3 - Conference contribution

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T3 - Proceedings - 2014 International Conference on Information Science, Electronics and Electrical Engineering, ISEEE 2014

SP - 977

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BT - Proceedings - 2014 International Conference on Information Science, Electronics and Electrical Engineering, ISEEE 2014

A2 - Jiang, Xiaohong

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A2 - Cheng, Yun

A2 - Dai, Ying

PB - Institute of Electrical and Electronics Engineers Inc.

ER -

Chou BY, Liu HY, Hsu WC, Lee CS, Wu YS, Yao EP. Electrical and reliability performances of stacked HfO2/Al2O3 MOS-HEMTs. 於 Jiang X, Li S, Cheng Y, Dai Y, 編輯, Proceedings - 2014 International Conference on Information Science, Electronics and Electrical Engineering, ISEEE 2014. Institute of Electrical and Electronics Engineers Inc. 2014. p. 977-981. 6947814. (Proceedings - 2014 International Conference on Information Science, Electronics and Electrical Engineering, ISEEE 2014). https://doi.org/10.1109/InfoSEEE.2014.6947814