Electrical and surface composition properties of phosphorus implantation in Mg-doped GaN

K. T. Liu, Y. K. Su, R. W. Chuang, S. J. Chang, Y. Horikoshi

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7 引文 斯高帕斯(Scopus)

摘要

Changes in electrical as well as surface composition such as chemical and electronic properties of Mg-doped p-type GaN by phosphorus implanting are systematically investigated using Hall effect and X-ray photoelectron spectroscopy (XPS) measurements. It is shown that p-type conductivity of Mg-doped GaN can be improved by implanting P atoms after a proper post-implantation annealing treatment, probably due to the reduction of self-compensation by P atoms substitution on N vacancy sites. XPS analysis is further found that the decrease of surface oxides and the shift of the surface Fermi level toward the valence band edge through P atoms introduced. These experimental results indicate that the P implantation is an effective method to improve p-type conductivity of Mg-doped GaN and reducing the surface barrier height, which can lead to a lower metal contact resistivity to p-type GaN.

原文English
頁(從 - 到)417-420
頁數4
期刊Microelectronics Journal
37
發行號5
DOIs
出版狀態Published - 2006 五月

All Science Journal Classification (ASJC) codes

  • 電子、光磁材料
  • 原子與分子物理與光學
  • 凝聚態物理學
  • 表面、塗料和薄膜
  • 電氣與電子工程

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