Electrical characteristics of a lattice-matched In0.53Al0.22Ga0.25As InP heterojunction bipolar transistor with zero potential spike at emitter-base heterojunction

Y. H. Wu, J. S. Su, Wei-Chou Hsu, W. Lin, Wen-Chau Liu

研究成果: Article

3 引文 (Scopus)

摘要

We report qualitatively a lattice-matched In0.53Al0.22Ga0.25As InP heterojunction bipolar transistor grown by low-pressure metalorganic chemical vapor deposition (LP-MOCVD). The In0.53Al0.22Ga0.25As InP heterostructure has a large valence band discontinuity and a zero conduction band discontinuity which are suitable for the HBTs. A common-emitter current gain of 85 along with a low offset voltage 50 mV are obtained. The junction ideality factors of collector and base current are 1.18 and 1.35, respectively. The current gain (hFE) slightly increases with the increase of collector current.

原文English
頁(從 - 到)1755-1757
頁數3
期刊Solid State Electronics
38
發行號10
DOIs
出版狀態Published - 1995 一月 1

指紋

spike potentials
Heterojunction bipolar transistors
bipolar transistors
Heterojunctions
heterojunctions
emitters
Low pressure chemical vapor deposition
Metallorganic chemical vapor deposition
Valence bands
Conduction bands
accumulators
discontinuity
Electric potential
low voltage
metalorganic chemical vapor deposition
conduction bands
low pressure
valence

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Materials Chemistry
  • Electrical and Electronic Engineering

引用此文

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title = "Electrical characteristics of a lattice-matched In0.53Al0.22Ga0.25As InP heterojunction bipolar transistor with zero potential spike at emitter-base heterojunction",
abstract = "We report qualitatively a lattice-matched In0.53Al0.22Ga0.25As InP heterojunction bipolar transistor grown by low-pressure metalorganic chemical vapor deposition (LP-MOCVD). The In0.53Al0.22Ga0.25As InP heterostructure has a large valence band discontinuity and a zero conduction band discontinuity which are suitable for the HBTs. A common-emitter current gain of 85 along with a low offset voltage 50 mV are obtained. The junction ideality factors of collector and base current are 1.18 and 1.35, respectively. The current gain (hFE) slightly increases with the increase of collector current.",
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T1 - Electrical characteristics of a lattice-matched In0.53Al0.22Ga0.25As InP heterojunction bipolar transistor with zero potential spike at emitter-base heterojunction

AU - Wu, Y. H.

AU - Su, J. S.

AU - Hsu, Wei-Chou

AU - Lin, W.

AU - Liu, Wen-Chau

PY - 1995/1/1

Y1 - 1995/1/1

N2 - We report qualitatively a lattice-matched In0.53Al0.22Ga0.25As InP heterojunction bipolar transistor grown by low-pressure metalorganic chemical vapor deposition (LP-MOCVD). The In0.53Al0.22Ga0.25As InP heterostructure has a large valence band discontinuity and a zero conduction band discontinuity which are suitable for the HBTs. A common-emitter current gain of 85 along with a low offset voltage 50 mV are obtained. The junction ideality factors of collector and base current are 1.18 and 1.35, respectively. The current gain (hFE) slightly increases with the increase of collector current.

AB - We report qualitatively a lattice-matched In0.53Al0.22Ga0.25As InP heterojunction bipolar transistor grown by low-pressure metalorganic chemical vapor deposition (LP-MOCVD). The In0.53Al0.22Ga0.25As InP heterostructure has a large valence band discontinuity and a zero conduction band discontinuity which are suitable for the HBTs. A common-emitter current gain of 85 along with a low offset voltage 50 mV are obtained. The junction ideality factors of collector and base current are 1.18 and 1.35, respectively. The current gain (hFE) slightly increases with the increase of collector current.

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JO - Solid-State Electronics

JF - Solid-State Electronics

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