Electrical characteristics of nMOSFETs fabricated on hybrid orientation substrate with amorphization/templated recrystallization method

Po Chin Huang, San Lein Wu, Shoou Jinn Chang, Yao Tsung Huang, Chien Ting Lin, Mike Ma, Osbert Cheng

研究成果: Article

2 引文 (Scopus)

摘要

The use of hybrid orientation technology (HOT) with direct silicon bond (DSB) wafers consisting of a (1 1 0) crystal orientation layer bonded to a bulk (1 0 0) handle wafer provides promising opportunities for easier migration of bulk CMOS designs to higher performance materials. However, the material quality of nMOSFETs regions, which has been undergone amorphization/templated recrystallization (ATR) process for transforming the Si surface into (1 0 0) orientation, is still a concern because the ATR-induced defects (i.e., dislocation loops or threads) at the recrystallization layer, could degrade gate oxide integrity. In this paper, we report an investigation of charge pumping and low-frequency (1/f) noise in HOT nMOSFETs. Devices with the increased anneal time brought out a significant reduction in the charge pumping current and 1/f noise, which indicates ATR-induced defects were suppressed and consequently the "low-trap-density" of the Si/SiO2 interface. Finally, for the first time, the behavior of 1/f noise for HOT nMOSFETs was investigated, and could be described by a unified model, i.e. a combination of carrier-number fluctuations and mobility fluctuations.

原文English
頁(從 - 到)662-665
頁數4
期刊Microelectronics Reliability
50
發行號5
DOIs
出版狀態Published - 2010 五月 1

指紋

Amorphization
Substrates
Defects
Silicon
pumping
Crystal orientation
Oxides
wafers
threads
defects
integrity
CMOS
traps
low frequencies
oxides
silicon
crystals

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Atomic and Molecular Physics, and Optics
  • Condensed Matter Physics
  • Safety, Risk, Reliability and Quality
  • Surfaces, Coatings and Films
  • Electrical and Electronic Engineering

引用此文

Huang, Po Chin ; Wu, San Lein ; Chang, Shoou Jinn ; Huang, Yao Tsung ; Lin, Chien Ting ; Ma, Mike ; Cheng, Osbert. / Electrical characteristics of nMOSFETs fabricated on hybrid orientation substrate with amorphization/templated recrystallization method. 於: Microelectronics Reliability. 2010 ; 卷 50, 編號 5. 頁 662-665.
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Electrical characteristics of nMOSFETs fabricated on hybrid orientation substrate with amorphization/templated recrystallization method. / Huang, Po Chin; Wu, San Lein; Chang, Shoou Jinn; Huang, Yao Tsung; Lin, Chien Ting; Ma, Mike; Cheng, Osbert.

於: Microelectronics Reliability, 卷 50, 編號 5, 01.05.2010, p. 662-665.

研究成果: Article

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AU - Huang, Po Chin

AU - Wu, San Lein

AU - Chang, Shoou Jinn

AU - Huang, Yao Tsung

AU - Lin, Chien Ting

AU - Ma, Mike

AU - Cheng, Osbert

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