Electrical characterization of Cu composition effects in CdS/CdTe thin-film solar cells with a ZnTe:Cu back contact

Jian V. Li; Joel N. Duenow; Darius Kuciauskas; Ana Kanevce; Ramesh G. Dhere; Matthew R. Young; Dean H. Levi

doi:10.1109/PVSC-Vol2.2013.6656756

Electrical characterization of Cu composition effects in CdS/CdTe thin-film solar cells with a ZnTe:Cu back contact

Jian V. Li, Joel N. Duenow, Darius Kuciauskas, Ana Kanevce, Ramesh G. Dhere, Matthew R. Young, Dean H. Levi

航空太空工程學系

研究成果: Conference contribution

6 引文斯高帕斯（Scopus）

摘要

We study the effects of Cu composition on the CdTe/ZnTe:Cu back contact and the bulk CdTe. For the back contact, its potential barrier decreases with Cu concentration while its saturation current density increases. For the bulk CdTe, the hole density increases with Cu concentration. We identify a Cu-related deep level at ∼0.55 eV whose concentration is significant when the Cu concentration is high. The device performance, which initially improves with Cu concentration then decreases, reflects the interplay between the positive influences (reducing the back contact potential barrier while increasing the saturation current density of the back contact and hole density in CdTe bulk) and negative influences (increasing deep levels in CdTe) of Cu.

原文	English
主出版物標題	2012 IEEE 38th Photovoltaic Specialists Conference, PVSC 2012
版本	PART 2
DOIs	https://doi.org/10.1109/PVSC-Vol2.2013.6656756
出版狀態	Published - 2012
事件	2012 IEEE 38th Photovoltaic Specialists Conference, PVSC 2012 - Austin, TX, United States 持續時間: 2012 6月 3 → 2012 6月 8

出版系列

名字	Conference Record of the IEEE Photovoltaic Specialists Conference
號碼	PART 2
ISSN（列印）	0160-8371

Other

Other	2012 IEEE 38th Photovoltaic Specialists Conference, PVSC 2012
國家/地區	United States
城市	Austin, TX
期間	12-06-03 → 12-06-08

All Science Journal Classification (ASJC) codes

控制與系統工程
工業與製造工程
電氣與電子工程

存取文件

10.1109/PVSC-Vol2.2013.6656756

其它文件與鏈接

引用此

Li, J. V., Duenow, J. N., Kuciauskas, D., Kanevce, A., Dhere, R. G., Young, M. R., & Levi, D. H. (2012). Electrical characterization of Cu composition effects in CdS/CdTe thin-film solar cells with a ZnTe:Cu back contact. 於 2012 IEEE 38th Photovoltaic Specialists Conference, PVSC 2012 (PART 2 編輯). 文章 6656756 (Conference Record of the IEEE Photovoltaic Specialists Conference; 編號 PART 2). https://doi.org/10.1109/PVSC-Vol2.2013.6656756

@inproceedings{0c93ce9d7d204ec99afb366dc63abd22,

title = "Electrical characterization of Cu composition effects in CdS/CdTe thin-film solar cells with a ZnTe:Cu back contact",

abstract = "We study the effects of Cu composition on the CdTe/ZnTe:Cu back contact and the bulk CdTe. For the back contact, its potential barrier decreases with Cu concentration while its saturation current density increases. For the bulk CdTe, the hole density increases with Cu concentration. We identify a Cu-related deep level at ∼0.55 eV whose concentration is significant when the Cu concentration is high. The device performance, which initially improves with Cu concentration then decreases, reflects the interplay between the positive influences (reducing the back contact potential barrier while increasing the saturation current density of the back contact and hole density in CdTe bulk) and negative influences (increasing deep levels in CdTe) of Cu.",

author = "Li, {Jian V.} and Duenow, {Joel N.} and Darius Kuciauskas and Ana Kanevce and Dhere, {Ramesh G.} and Young, {Matthew R.} and Levi, {Dean H.}",

year = "2012",

doi = "10.1109/PVSC-Vol2.2013.6656756",

language = "English",

isbn = "9781467328883",

series = "Conference Record of the IEEE Photovoltaic Specialists Conference",

number = "PART 2",

booktitle = "2012 IEEE 38th Photovoltaic Specialists Conference, PVSC 2012",

edition = "PART 2",

note = "2012 IEEE 38th Photovoltaic Specialists Conference, PVSC 2012 ; Conference date: 03-06-2012 Through 08-06-2012",

}

Li, JV, Duenow, JN, Kuciauskas, D, Kanevce, A, Dhere, RG, Young, MR & Levi, DH 2012, Electrical characterization of Cu composition effects in CdS/CdTe thin-film solar cells with a ZnTe:Cu back contact. 於 2012 IEEE 38th Photovoltaic Specialists Conference, PVSC 2012. PART 2 edn, 6656756, Conference Record of the IEEE Photovoltaic Specialists Conference, 編號 PART 2, 2012 IEEE 38th Photovoltaic Specialists Conference, PVSC 2012, Austin, TX, United States, 12-06-03. https://doi.org/10.1109/PVSC-Vol2.2013.6656756

Electrical characterization of Cu composition effects in CdS/CdTe thin-film solar cells with a ZnTe:Cu back contact. / Li, Jian V.; Duenow, Joel N.; Kuciauskas, Darius 等.
2012 IEEE 38th Photovoltaic Specialists Conference, PVSC 2012. PART 2. 編輯 2012. 6656756 (Conference Record of the IEEE Photovoltaic Specialists Conference; 編號 PART 2).

研究成果: Conference contribution

TY - GEN

T1 - Electrical characterization of Cu composition effects in CdS/CdTe thin-film solar cells with a ZnTe:Cu back contact

AU - Li, Jian V.

AU - Duenow, Joel N.

AU - Kuciauskas, Darius

AU - Kanevce, Ana

AU - Dhere, Ramesh G.

AU - Young, Matthew R.

AU - Levi, Dean H.

PY - 2012

Y1 - 2012

N2 - We study the effects of Cu composition on the CdTe/ZnTe:Cu back contact and the bulk CdTe. For the back contact, its potential barrier decreases with Cu concentration while its saturation current density increases. For the bulk CdTe, the hole density increases with Cu concentration. We identify a Cu-related deep level at ∼0.55 eV whose concentration is significant when the Cu concentration is high. The device performance, which initially improves with Cu concentration then decreases, reflects the interplay between the positive influences (reducing the back contact potential barrier while increasing the saturation current density of the back contact and hole density in CdTe bulk) and negative influences (increasing deep levels in CdTe) of Cu.

AB - We study the effects of Cu composition on the CdTe/ZnTe:Cu back contact and the bulk CdTe. For the back contact, its potential barrier decreases with Cu concentration while its saturation current density increases. For the bulk CdTe, the hole density increases with Cu concentration. We identify a Cu-related deep level at ∼0.55 eV whose concentration is significant when the Cu concentration is high. The device performance, which initially improves with Cu concentration then decreases, reflects the interplay between the positive influences (reducing the back contact potential barrier while increasing the saturation current density of the back contact and hole density in CdTe bulk) and negative influences (increasing deep levels in CdTe) of Cu.

UR - http://www.scopus.com/inward/record.url?scp=84891084701&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=84891084701&partnerID=8YFLogxK

U2 - 10.1109/PVSC-Vol2.2013.6656756

DO - 10.1109/PVSC-Vol2.2013.6656756

M3 - Conference contribution

AN - SCOPUS:84891084701

SN - 9781467328883

T3 - Conference Record of the IEEE Photovoltaic Specialists Conference

BT - 2012 IEEE 38th Photovoltaic Specialists Conference, PVSC 2012

T2 - 2012 IEEE 38th Photovoltaic Specialists Conference, PVSC 2012

Y2 - 3 June 2012 through 8 June 2012

ER -

Li JV, Duenow JN, Kuciauskas D, Kanevce A, Dhere RG, Young MR 等. Electrical characterization of Cu composition effects in CdS/CdTe thin-film solar cells with a ZnTe:Cu back contact. 於 2012 IEEE 38th Photovoltaic Specialists Conference, PVSC 2012. PART 2 編輯 2012. 6656756. (Conference Record of the IEEE Photovoltaic Specialists Conference; PART 2). doi: 10.1109/PVSC-Vol2.2013.6656756

Electrical characterization of Cu composition effects in CdS/CdTe thin-film solar cells with a ZnTe:Cu back contact

摘要

出版系列

Other

All Science Journal Classification (ASJC) codes

存取文件

其它文件與鏈接

指紋

引用此