Electrical characterization of resistive memory in metal-Pr 0.7Ca0.3MnO3 interface: A future non-volatile memory device

N. Das, Y. Y. Xue, Y. Q. Wang, C. W. Chu

研究成果: Conference contribution

1 引文 斯高帕斯(Scopus)

摘要

The phenomenon of electric pulse induced resistive switching in metal (Ag)-oxide (Pr0.7Ca0.3MnO3) interface has been studied in detail. Dielectric spectroscopy (frequency range ∼10Hz-IOMz) has been used to investigate the formation of switched interface and underlying mesostructure. Resistance switch has been realized only over a voltage threshold (VTh) and a very fast 'write' speed (∼100 ns or less) with excellent reversibility has been achieved. Detailed kinetics and relaxation studies are conducted with data retention time period of more than 10 8 sec (∼years). Based on the above results, a defect creation/annihilation and lattice rearrangement model for switching has been developed. C-AFM (conductive AFM) has been used to study the nano inhomogeneity of the conductivity of metal-PCMO interface and a more complex percolation model has been outlined.

原文English
主出版物標題Proceedings - 2009 10th Non-Volatile Memory Technology Symposium, NVMTS 2009
頁面28-47
頁數20
DOIs
出版狀態Published - 2009
事件2009 10th Non-Volatile Memory Technology Symposium, NVMTS 2009 - Portland, OR, United States
持續時間: 2009 10月 252009 10月 28

出版系列

名字Proceedings - 2009 10th Non-Volatile Memory Technology Symposium, NVMTS 2009

Conference

Conference2009 10th Non-Volatile Memory Technology Symposium, NVMTS 2009
國家/地區United States
城市Portland, OR
期間09-10-2509-10-28

All Science Journal Classification (ASJC) codes

  • 硬體和架構
  • 電氣與電子工程
  • 電子、光磁材料

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