Electrical characterization of sol-gel La2Ti2O7 films for resistive random access memory applications

Ming Jen Li, Tsung Hsien Hsu, Cheng Liang Huang

研究成果: Article同行評審

摘要

The bipolar resistive switching (BRS) devices were investigated for RRAM applications in a MIM structure based on sol-gel derived amorphous La2Ti2O7 (LTO) thin films. The influences on the resistive switching (RS) properties according to the film thickness, electrode, annealing temperature and post metal annealing (PMA) treatment were also discussed. Moreover, RS performance of the RRAMs is affected by the work functions of electrodes. The RS characteristics of the devices are controlled by oxygen vacancies and the content of oxygen vacancies was seriously reduced after annealing, which led to a significant decrease of the endurance. In addition, PMA treatment increased the content of oxygen vacancies attributed to the forming of AlOx interface layer and made Al ions diffuse into the films to form bridges, which improved the RS performance of the devices. Consequently, the sample with 300 °C PMA exhibits the optimized RS properties with maximum switching cycles of 2674, a Ron/Roff ratio of 102, low operating voltages (VSet/VReset = 1.32 V/−1.21 V), and a retention time of over 104 s at room temperature and 85 °C, indicating the promising potential for practical RRAM applications. Conduction mechanism of all devices with Al top electrode were described by trap-controlled space-charge limited current (SCLC) and ohmic conduction.

原文English
文章編號107370
期刊Materials Science in Semiconductor Processing
158
DOIs
出版狀態Published - 2023 5月

All Science Journal Classification (ASJC) codes

  • 一般材料科學
  • 凝聚態物理學
  • 材料力學
  • 機械工業

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