Electrical derivative characteristics of ion-implanted AlGaInP/GaInP multi-quantum well lasers

Jinn Kong Sheu, Yan Kuin Su, Shoou Jinn Chang, Gou Chung Chi, Kai Bin Lin, Chia Cheng Liu, Chien Chia Chiu

研究成果: Article同行評審

11 引文 斯高帕斯(Scopus)

摘要

In this study, H+ ion implantation was used to form high resistive regions in an AlGaInP/ GaInP multi-quantum well (MQW) gain guided laser diode. The electrical derivative was used to characterize the properties of the fabricated laser diodes. The equivalent circuits were proposed to model the diodes for various structures. It was found that diodes fabricated with H+ ion implantation, have lower threshold current density and better carrier confinement characteristics.

原文English
頁(從 - 到)1867-1869
頁數3
期刊Solid-State Electronics
42
發行號10
DOIs
出版狀態Published - 1998 十月 1

All Science Journal Classification (ASJC) codes

  • 電子、光磁材料
  • 凝聚態物理學
  • 電氣與電子工程
  • 材料化學

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