TY - JOUR
T1 - Electrical-efficiency analysis of GaN-based light-emitting diodes with interdigitated-mesa geometry
AU - Ting, Yi Sheng
AU - Chen, Chii Chang
AU - Sheu, Jinn Kong
AU - Chi, Gou Chung
AU - Hsu, Jung Tsung
N1 - Funding Information:
The work was supported by grants from the National Science Council, Taiwan; and Grant No. 89S36-T2 from the Opto-Electronics & Systems Laboratories, Industrial Technology Research Institute, Taiwan, which was supported from MOEA with Project No. 90-EC-2-A-17-0337; and Grant No. 89-E-FA06-1-4 (Program for Promoting Academic Excellence of Universities) from the Ministry of Education, Taiwan. The authors thank T. Gessmann and E.F. Schubert from Boston University for many useful discussions.
PY - 2003/5
Y1 - 2003/5
N2 - We propose a novel method to analyze the current-voltage (I-V) characteristics of GaN-based light-emitting diodes (LEDs) with different p-type electrode-mesa geometries. The electrical efficiency is analyzed by calculating the electric field under the quasi-coplanar electrodes of GaN-based LEDs. The experimental results for GaN-based LEDs of chip sizes of 350 × 350 μm2 and 1,000 × 1,000 μm2 with interdigitated fingers are compared. A good agreement is obtained between the experimental and theoretical electrical efficiency of the GaN LEDs with a chip size of 1,000 × 1,000 μm2. The current-crowding effect is analyzed by measuring the electroluminescence spectra of the devices. The result indicates that the current-crowding effect is largely reduced by increasing the number of interdigitated fingers. The electrical efficiency of a LED with a chip size of 1,000 × 1,000 μm2 can be also enhanced by increasing the number of interdigitated fingers, showing the advantages of GaN LED with interdigitated-mesa geometries.
AB - We propose a novel method to analyze the current-voltage (I-V) characteristics of GaN-based light-emitting diodes (LEDs) with different p-type electrode-mesa geometries. The electrical efficiency is analyzed by calculating the electric field under the quasi-coplanar electrodes of GaN-based LEDs. The experimental results for GaN-based LEDs of chip sizes of 350 × 350 μm2 and 1,000 × 1,000 μm2 with interdigitated fingers are compared. A good agreement is obtained between the experimental and theoretical electrical efficiency of the GaN LEDs with a chip size of 1,000 × 1,000 μm2. The current-crowding effect is analyzed by measuring the electroluminescence spectra of the devices. The result indicates that the current-crowding effect is largely reduced by increasing the number of interdigitated fingers. The electrical efficiency of a LED with a chip size of 1,000 × 1,000 μm2 can be also enhanced by increasing the number of interdigitated fingers, showing the advantages of GaN LED with interdigitated-mesa geometries.
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U2 - 10.1007/s11664-003-0150-y
DO - 10.1007/s11664-003-0150-y
M3 - Article
AN - SCOPUS:0038325665
SN - 0361-5235
VL - 32
SP - 312
EP - 315
JO - Journal of Electronic Materials
JF - Journal of Electronic Materials
IS - 5
ER -