摘要
In this paper, we use rf magnetron sputtering method to fabricate InGaZnO thin-film transistors. We use surface energy to identify the relationship between InGaZnO thin-film transistors with various annealing temperature. We also examine the InGaZnO TFT devices characteristic and hysteresis.
| 原文 | English |
|---|---|
| 主出版物標題 | 22nd International Display Workshops, IDW 2015 |
| 發行者 | International Display Workshops |
| 頁面 | 121-124 |
| 頁數 | 4 |
| ISBN（電子） | 9781510845503 |
| 出版狀態 | Published - 2015 一月 1 |
| 事件 | 22nd International Display Workshops, IDW 2015 - Otsu, Japan 持續時間: 2015 十二月 9 → 2015 十二月 11 |
出版系列
| 名字 | Proceedings of the International Display Workshops |
|---|---|
| 卷 | 1 |
| ISSN（列印） | 1883-2490 |
Other
| Other | 22nd International Display Workshops, IDW 2015 |
|---|---|
| 國家 | Japan |
| 城市 | Otsu |
| 期間 | 15-12-09 → 15-12-11 |
指紋
All Science Journal Classification (ASJC) codes
- Computer Vision and Pattern Recognition
- Human-Computer Interaction
- Electrical and Electronic Engineering
- Electronic, Optical and Magnetic Materials
- Radiology Nuclear Medicine and imaging
引用此文
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Electrical properties of a-IGZO TFT with various annealing temperature. / Hsieh, Yun Henq; Chen, Menq Chun; Chu, Sheng Yuan.
22nd International Display Workshops, IDW 2015. International Display Workshops, 2015. p. 121-124 (Proceedings of the International Display Workshops; 卷 1).研究成果: Conference contribution
TY - GEN
T1 - Electrical properties of a-IGZO TFT with various annealing temperature
AU - Hsieh, Yun Henq
AU - Chen, Menq Chun
AU - Chu, Sheng Yuan
PY - 2015/1/1
Y1 - 2015/1/1
N2 - In this paper, we use rf magnetron sputtering method to fabricate InGaZnO thin-film transistors. We use surface energy to identify the relationship between InGaZnO thin-film transistors with various annealing temperature. We also examine the InGaZnO TFT devices characteristic and hysteresis.
AB - In this paper, we use rf magnetron sputtering method to fabricate InGaZnO thin-film transistors. We use surface energy to identify the relationship between InGaZnO thin-film transistors with various annealing temperature. We also examine the InGaZnO TFT devices characteristic and hysteresis.
UR - http://www.scopus.com/inward/record.url?scp=85056433303&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=85056433303&partnerID=8YFLogxK
M3 - Conference contribution
AN - SCOPUS:85056433303
T3 - Proceedings of the International Display Workshops
SP - 121
EP - 124
BT - 22nd International Display Workshops, IDW 2015
PB - International Display Workshops
ER -