TY - GEN
T1 - Electrical properties of a-IGZO TFT with various annealing temperature
AU - Hsieh, Yun Henq
AU - Chen, Menq Chun
AU - Chu, Sheng Yuan
N1 - Publisher Copyright:
© 2015 Society for Information Display.
PY - 2015
Y1 - 2015
N2 - In this paper, we use rf magnetron sputtering method to fabricate InGaZnO thin-film transistors. We use surface energy to identify the relationship between InGaZnO thin-film transistors with various annealing temperature. We also examine the InGaZnO TFT devices characteristic and hysteresis.
AB - In this paper, we use rf magnetron sputtering method to fabricate InGaZnO thin-film transistors. We use surface energy to identify the relationship between InGaZnO thin-film transistors with various annealing temperature. We also examine the InGaZnO TFT devices characteristic and hysteresis.
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M3 - Conference contribution
AN - SCOPUS:85056433303
T3 - Proceedings of the International Display Workshops
SP - 121
EP - 124
BT - 22nd International Display Workshops, IDW 2015
PB - International Display Workshops
T2 - 22nd International Display Workshops, IDW 2015
Y2 - 9 December 2015 through 11 December 2015
ER -
