Electrical properties of a-IGZO TFT with various annealing temperature

Yun Henq Hsieh, Menq Chun Chen, Sheng Yuan Chu

研究成果: Conference contribution

摘要

In this paper, we use rf magnetron sputtering method to fabricate InGaZnO thin-film transistors. We use surface energy to identify the relationship between InGaZnO thin-film transistors with various annealing temperature. We also examine the InGaZnO TFT devices characteristic and hysteresis.

原文English
主出版物標題22nd International Display Workshops, IDW 2015
發行者International Display Workshops
頁面121-124
頁數4
ISBN（電子）9781510845503
出版狀態Published - 2015
事件22nd International Display Workshops, IDW 2015 - Otsu, Japan
持續時間: 2015 十二月 9 → 2015 十二月 11

出版系列

名字Proceedings of the International Display Workshops
卷1
ISSN（列印）1883-2490

Other

Other22nd International Display Workshops, IDW 2015
國家Japan
城市Otsu
期間15-12-09 → 15-12-11

All Science Journal Classification (ASJC) codes

  • Computer Vision and Pattern Recognition
  • Human-Computer Interaction
  • Electrical and Electronic Engineering
  • Electronic, Optical and Magnetic Materials
  • Radiology Nuclear Medicine and imaging

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