Electrical properties of a-IGZO TFT with various annealing temperature

Yun Heng Hsieh, Meng Chun Chen, Sheng-Yuan Chu

研究成果: Conference contribution

摘要

In this paper, we use rf magnetron sputtering method to fabricate InGaZnO thin-film transistors. We use surface energy to identify the relationship between InGaZnO thinfilm transistors with various annealing temperature. We also examine the InGaZnO TFT devices characteristic and hysteresis.

原文English
主出版物標題22nd International Display Workshops, IDW 2015
發行者International Display Workshops
頁面647-650
頁數4
ISBN(電子)9781510845503
出版狀態Published - 2015 一月 1
事件22nd International Display Workshops, IDW 2015 - Otsu, Japan
持續時間: 2015 十二月 92015 十二月 11

出版系列

名字Proceedings of the International Display Workshops
2
ISSN(列印)1883-2490

Other

Other22nd International Display Workshops, IDW 2015
國家Japan
城市Otsu
期間15-12-0915-12-11

All Science Journal Classification (ASJC) codes

  • Computer Vision and Pattern Recognition
  • Human-Computer Interaction
  • Electrical and Electronic Engineering
  • Electronic, Optical and Magnetic Materials
  • Radiology Nuclear Medicine and imaging

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  • 引用此

    Hsieh, Y. H., Chen, M. C., & Chu, S-Y. (2015). Electrical properties of a-IGZO TFT with various annealing temperature. 於 22nd International Display Workshops, IDW 2015 (頁 647-650). (Proceedings of the International Display Workshops; 卷 2). International Display Workshops.