Electrical properties of a-IGZO TFT with various annealing temperature

Yun Henq Hsieh, Menq Chun Chen, Sheng Yuan Chu

研究成果: Conference contribution

摘要

In this paper, we use rf magnetron sputtering method to fabricate InGaZnO thin-film transistors. We use surface energy to identify the relationship between InGaZnO thin-film transistors with various annealing temperature. We also examine the InGaZnO TFT devices characteristic and hysteresis.

原文English
主出版物標題22nd International Display Workshops, IDW 2015
發行者International Display Workshops
頁面121-124
頁數4
ISBN(電子)9781510845503
出版狀態Published - 2015 一月 1
事件22nd International Display Workshops, IDW 2015 - Otsu, Japan
持續時間: 2015 十二月 92015 十二月 11

出版系列

名字Proceedings of the International Display Workshops
1
ISSN(列印)1883-2490

Other

Other22nd International Display Workshops, IDW 2015
國家Japan
城市Otsu
期間15-12-0915-12-11

All Science Journal Classification (ASJC) codes

  • Computer Vision and Pattern Recognition
  • Human-Computer Interaction
  • Electrical and Electronic Engineering
  • Electronic, Optical and Magnetic Materials
  • Radiology Nuclear Medicine and imaging

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  • 引用此

    Hsieh, Y. H., Chen, M. C., & Chu, S. Y. (2015). Electrical properties of a-IGZO TFT with various annealing temperature. 於 22nd International Display Workshops, IDW 2015 (頁 121-124). (Proceedings of the International Display Workshops; 卷 1). International Display Workshops.