Electrical properties of a-IGZO TFT with various annealing temperature

Yun Henq Hsieh; Menq Chun Chen; Sheng Yuan Chu

Electrical properties of a-IGZO TFT with various annealing temperature

Yun Henq Hsieh
, Menq Chun Chen
, Sheng Yuan Chu

電機工程學系

研究成果: Conference contribution

摘要

In this paper, we use rf magnetron sputtering method to fabricate InGaZnO thin-film transistors. We use surface energy to identify the relationship between InGaZnO thin-film transistors with various annealing temperature. We also examine the InGaZnO TFT devices characteristic and hysteresis.

原文	English
主出版物標題	22nd International Display Workshops, IDW 2015
發行者	International Display Workshops
頁面	121-124
頁數	4
ISBN（電子）	9781510845503
出版狀態	Published - 2015
事件	22nd International Display Workshops, IDW 2015 - Otsu, Japan 持續時間: 2015 12月 9 → 2015 12月 11

出版系列

名字	Proceedings of the International Display Workshops
卷	1
ISSN（列印）	1883-2490

Other

Other	22nd International Display Workshops, IDW 2015
國家/地區	Japan
城市	Otsu
期間	15-12-09 → 15-12-11

UN SDG

此研究成果有助於以下永續發展目標

SDG 3 良好的健康和福祉

All Science Journal Classification (ASJC) codes

電腦視覺和模式識別
人機介面
電氣與電子工程
電子、光磁材料
放射學、核子醫學和影像學

其它文件與鏈接

引用此

@inproceedings{00d5c9597be74e6e812faa8fd1c4c39a,

title = "Electrical properties of a-IGZO TFT with various annealing temperature",

abstract = "In this paper, we use rf magnetron sputtering method to fabricate InGaZnO thin-film transistors. We use surface energy to identify the relationship between InGaZnO thin-film transistors with various annealing temperature. We also examine the InGaZnO TFT devices characteristic and hysteresis.",

author = "Hsieh, \{Yun Henq\} and Chen, \{Menq Chun\} and Chu, \{Sheng Yuan\}",

note = "Publisher Copyright: {\textcopyright} 2015 Society for Information Display.; 22nd International Display Workshops, IDW 2015 ; Conference date: 09-12-2015 Through 11-12-2015",

year = "2015",

language = "English",

series = "Proceedings of the International Display Workshops",

publisher = "International Display Workshops",

pages = "121--124",

booktitle = "22nd International Display Workshops, IDW 2015",

}

TY - GEN

T1 - Electrical properties of a-IGZO TFT with various annealing temperature

AU - Hsieh, Yun Henq

AU - Chen, Menq Chun

AU - Chu, Sheng Yuan

PY - 2015

Y1 - 2015

N2 - In this paper, we use rf magnetron sputtering method to fabricate InGaZnO thin-film transistors. We use surface energy to identify the relationship between InGaZnO thin-film transistors with various annealing temperature. We also examine the InGaZnO TFT devices characteristic and hysteresis.

AB - In this paper, we use rf magnetron sputtering method to fabricate InGaZnO thin-film transistors. We use surface energy to identify the relationship between InGaZnO thin-film transistors with various annealing temperature. We also examine the InGaZnO TFT devices characteristic and hysteresis.

UR - https://www.scopus.com/pages/publications/85056433303

UR - https://www.scopus.com/pages/publications/85056433303#tab=citedBy

M3 - Conference contribution

AN - SCOPUS:85056433303

T3 - Proceedings of the International Display Workshops

SP - 121

EP - 124

BT - 22nd International Display Workshops, IDW 2015

PB - International Display Workshops

T2 - 22nd International Display Workshops, IDW 2015

Y2 - 9 December 2015 through 11 December 2015

ER -

Electrical properties of a-IGZO TFT with various annealing temperature

摘要

出版系列

Other

UN SDG

All Science Journal Classification (ASJC) codes

其它文件與鏈接

指紋

引用此