Electrical properties of a single p-type ZnO nanowire by Ga implantation with FIB

Wen Huei Chu, Chuan-Pu Liu

研究成果: Conference contribution

1 引文 斯高帕斯(Scopus)

摘要

ZnO nanowires were implanted with Ga+ ions with a dose of 1012 cm-2 and a field effect transistor (FET) device with a single Ga-doped ZnO nanowire was fabricated in a combined scanning-electron- microscope/focused-ion-beam (SEM/FIB) system. Resistance measurements performed on a single Ga-doped ZnO nanowire show the ohmic contact behavior in current-voltage curves. Moreover, resistance roughly tends to decrease with the gate voltage changes from 1V to -6V, indicating the p-type behavior. The electrical activation energy for the hole carriers due to thermal activation is estimated to be ∼229.5±2.8 meV.

原文English
主出版物標題4th IEEE International NanoElectronics Conference, INEC 2011
DOIs
出版狀態Published - 2011 九月 26
事件4th IEEE International Nanoelectronics Conference, INEC 2011 - Tao-Yuan, Taiwan
持續時間: 2011 六月 212011 六月 24

出版系列

名字Proceedings - International NanoElectronics Conference, INEC
ISSN(列印)2159-3523

Other

Other4th IEEE International Nanoelectronics Conference, INEC 2011
國家Taiwan
城市Tao-Yuan
期間11-06-2111-06-24

    指紋

All Science Journal Classification (ASJC) codes

  • Electrical and Electronic Engineering

引用此

Chu, W. H., & Liu, C-P. (2011). Electrical properties of a single p-type ZnO nanowire by Ga implantation with FIB. 於 4th IEEE International NanoElectronics Conference, INEC 2011 [5991791] (Proceedings - International NanoElectronics Conference, INEC). https://doi.org/10.1109/INEC.2011.5991791