Electrical properties of GaAs metal-oxide-semiconductor structures with the oxide layer grown by liquid phase chemical-enhanced method

Dei Wei Chou, Hwei Heng Wang, Yeong Her Wang, Mau Phon Houng

研究成果: Article

6 引文 斯高帕斯(Scopus)


The oxide films prepared by liquid phase chemical-enhanced technique were electrically characterized using current-voltage and capacitance-voltage measurements on metal-oxide-semiconductor (MOS) structure. It was found that the leakage current density is roughly (1-2) × 10-6 A cm-2 at the electric filed of 1 MV cm-1. The oxides with denser structures exhibit higher refractive indices, higher reliability and also higher breakdown voltages. The breakdown fields of ∼ 7 MV cm-1 were obtained as refractive index is ∼2.12. In addition, dielectric constant of oxide films is found to increase with increasing thickness and varies within a wide range from 3.2 to 11 under accumulation region. Furthermore, short time ramp-voltage, constant-voltage and constant-current stress are employed to reliability study.

頁(從 - 到)772-777
期刊Materials Chemistry and Physics
出版狀態Published - 2003 二月 28


All Science Journal Classification (ASJC) codes

  • Materials Science(all)
  • Condensed Matter Physics