Electrical Properties of Indium Aluminum Zinc Oxide Thin Film Transistors

研究成果: Article

4 引文 (Scopus)

摘要

In this study, radio-frequency (RF) magnetron sputtering was used to deposit a 50 nm indium aluminum zinc oxide (IAZO) channel layer, following which a bottom-gate thin-film transistor (TFT) was fabricated. The oxygen ratio for the IAZO thin film was modulated from 0% to 6%. The film remained amorphous at annealing temperatures of 300°C and 500°C. Analysis of optical properties (performed via UV–Vis spectroscopy) shows that the bandgap increased from 5.24 eV to 5.32 eV when the oxygen flow ratio increased from 0% to 4%. The bandgap decreased to 5.19 eV when the flow ratio reached 6%. An appropriate variation of the O2/Ar flow ratio filled oxygen vacancies and improved the electrical properties; however, a higher oxygen ratio led to the regeneration of oxygen vacancies and degraded the device. TFTs with an oxygen flow ratio of 2% had a high mobility of 5.67 cm2/Vs, Ion/Ioff 3.37 × 106, and S.S. 0.61 V/dec.

原文English
頁(從 - 到)6923-6928
頁數6
期刊Journal of Electronic Materials
47
發行號11
DOIs
出版狀態Published - 2018 十一月 1

指紋

Zinc Oxide
Indium
Thin film transistors
Zinc oxide
Aluminum
zinc oxides
Oxide films
indium
Electric properties
transistors
aluminum oxides
electrical properties
Oxygen
oxygen
Oxygen vacancies
thin films
Energy gap
Amorphous films
Magnetron sputtering
Deposits

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Electrical and Electronic Engineering
  • Materials Chemistry

引用此文

@article{a59681ae9b264dc5ac4148a5964a2114,
title = "Electrical Properties of Indium Aluminum Zinc Oxide Thin Film Transistors",
abstract = "In this study, radio-frequency (RF) magnetron sputtering was used to deposit a 50 nm indium aluminum zinc oxide (IAZO) channel layer, following which a bottom-gate thin-film transistor (TFT) was fabricated. The oxygen ratio for the IAZO thin film was modulated from 0{\%} to 6{\%}. The film remained amorphous at annealing temperatures of 300°C and 500°C. Analysis of optical properties (performed via UV–Vis spectroscopy) shows that the bandgap increased from 5.24 eV to 5.32 eV when the oxygen flow ratio increased from 0{\%} to 4{\%}. The bandgap decreased to 5.19 eV when the flow ratio reached 6{\%}. An appropriate variation of the O2/Ar flow ratio filled oxygen vacancies and improved the electrical properties; however, a higher oxygen ratio led to the regeneration of oxygen vacancies and degraded the device. TFTs with an oxygen flow ratio of 2{\%} had a high mobility of 5.67 cm2/Vs, Ion/Ioff 3.37 × 106, and S.S. 0.61 V/dec.",
author = "Cheng, {Tien Hung} and Chang, {Sheng Po} and Chang, {Shoou Jinn}",
year = "2018",
month = "11",
day = "1",
doi = "10.1007/s11664-018-6618-6",
language = "English",
volume = "47",
pages = "6923--6928",
journal = "Journal of Electronic Materials",
issn = "0361-5235",
publisher = "Springer New York",
number = "11",

}

TY - JOUR

T1 - Electrical Properties of Indium Aluminum Zinc Oxide Thin Film Transistors

AU - Cheng, Tien Hung

AU - Chang, Sheng Po

AU - Chang, Shoou Jinn

PY - 2018/11/1

Y1 - 2018/11/1

N2 - In this study, radio-frequency (RF) magnetron sputtering was used to deposit a 50 nm indium aluminum zinc oxide (IAZO) channel layer, following which a bottom-gate thin-film transistor (TFT) was fabricated. The oxygen ratio for the IAZO thin film was modulated from 0% to 6%. The film remained amorphous at annealing temperatures of 300°C and 500°C. Analysis of optical properties (performed via UV–Vis spectroscopy) shows that the bandgap increased from 5.24 eV to 5.32 eV when the oxygen flow ratio increased from 0% to 4%. The bandgap decreased to 5.19 eV when the flow ratio reached 6%. An appropriate variation of the O2/Ar flow ratio filled oxygen vacancies and improved the electrical properties; however, a higher oxygen ratio led to the regeneration of oxygen vacancies and degraded the device. TFTs with an oxygen flow ratio of 2% had a high mobility of 5.67 cm2/Vs, Ion/Ioff 3.37 × 106, and S.S. 0.61 V/dec.

AB - In this study, radio-frequency (RF) magnetron sputtering was used to deposit a 50 nm indium aluminum zinc oxide (IAZO) channel layer, following which a bottom-gate thin-film transistor (TFT) was fabricated. The oxygen ratio for the IAZO thin film was modulated from 0% to 6%. The film remained amorphous at annealing temperatures of 300°C and 500°C. Analysis of optical properties (performed via UV–Vis spectroscopy) shows that the bandgap increased from 5.24 eV to 5.32 eV when the oxygen flow ratio increased from 0% to 4%. The bandgap decreased to 5.19 eV when the flow ratio reached 6%. An appropriate variation of the O2/Ar flow ratio filled oxygen vacancies and improved the electrical properties; however, a higher oxygen ratio led to the regeneration of oxygen vacancies and degraded the device. TFTs with an oxygen flow ratio of 2% had a high mobility of 5.67 cm2/Vs, Ion/Ioff 3.37 × 106, and S.S. 0.61 V/dec.

UR - http://www.scopus.com/inward/record.url?scp=85052826852&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=85052826852&partnerID=8YFLogxK

U2 - 10.1007/s11664-018-6618-6

DO - 10.1007/s11664-018-6618-6

M3 - Article

AN - SCOPUS:85052826852

VL - 47

SP - 6923

EP - 6928

JO - Journal of Electronic Materials

JF - Journal of Electronic Materials

SN - 0361-5235

IS - 11

ER -